Abstract:The interfacial electronic distribution in transition-metal oxide thin films is crucial to their interfacial physical or chemical behaviors. Core-loss electron energy-loss spectroscopy (EELS) may potentially give valuable information of local electronic density of state at high spatial resolution. Here, we studied the electronic properties at the interface of Pb(Zr0.2Ti0.8)O3 (PZT)/4.8 nm La0.8Sr0.2MnO3 (LSMO)/SrTiO3 (STO) using valance-EELS with a scanning transmission electron microscope. Modeled with dielectric function theory, the charge transfer in the vicinity of the interfaces of PZT/LSMO and LSMO/STO was determined from the shifts of plasma peaks of valence EELS (VEELS), agreeing with theoretical prediction. Our work demonstrates that the VEELS method enables a high-efficient quantification of the charge transfer at interfaces, shedding light on the charge-transfer issues at heterogenous interfaces in physical and chemical devices.

Quantification of Charge Transfer at the Interfaces of Oxide Thin Films.