A Monolithic Tunable Laser Based on Cascading of Distributed Feedback Laser Array

Shiyu Li,Jianyi Zhao,Ning Zhou,Mingyang Zhang,Qi Yang,Shaohua Yu,Xun Li

DOI: https://doi.org/10.1364/acpc.2016.af2a.42

2016-01-01

Abstract:We demonstrate a monolithic tunable laser based on cascading of distributed feedback laser array with 45 dB SMSR and more than 20 nm tuning range. The laser is placed in a 14-pin butterfly module with TEC control.

What problem does this paper attempt to address?

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

Haifeng Shao,Shahram Keyvaninia,Mathias Vanwolleghem,Guillaume Ducournau,Xiaoqing Jiang,Geert Morthier,Jean-Francois Lampin,Gunther Roelkens

DOI: https://doi.org/10.1364/ol.39.006403

2014-01-01

Abstract:We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.
Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Xiaolu Liao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1117/12.2073603

2014-01-01

Abstract:We present a 1560-nm-band digitally wavelength tunable V-coupled-cavity semiconductor laser monolithically integrated with two waveguides based monitoring photodiodes (MPD) through deeply etched reflective trenches. The reflective trenches are designed to be 1.16 mu m wide, about three quarters of the wavelength, and are deeply etched through the waveguide with a depth larger than 4 mu m. Due to the high reflectivity of the etched trenches, a low threshold current of 19mA is achieved. Using a single electrode control, wavelength tuning of 22 channels at 100GHz spacing with SMSR above 35 dB is obtained. The relationship between the photocurrents of the two MPD at the two waveguide branches and the laser output power from the coupler side is investigated as a function of the wavelength. Since the integrated tunable laser with MPDs is very compact and does not involve any grating or epitaxial regrowth, it is suitable for low-cost multifunctional photonic applications for access and data center networks.
Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Lianyan Li,Song Tang,Jun Lu,Yuechun Shi,Baoli Cao,Xiangfei Chen

DOI: https://doi.org/10.1016/j.optcom.2015.04.077

IF: 2.4

2015-01-01

Optics Communications

Abstract:The tunable distributed feedback (DFB) semiconductor lasers with cascaded configuration were designed and fabricated using equivalent phase shift (EPS) technique. 32-wavelength division multiplexing (WDM) channels with 50-GHz and 100-GHz wavelength spacing were experimentally demonstrated. In such a tunable laser, single mode operation can be ensured by introducing EPS and the wavelength tuning can be realized by cascaded sections with specific sampling periods combining with chip heating. The proposed approach has some advantages such as good single mode property, low fabrication cost and feasibility of monolithic integration. The experimental results show that the tuning range can be nearly up to 25nm and the side mode suppression ratios (SMSRs) of most channels are above 40dB. The proposed laser should be promising for cost-effective applications in WDM systems.
Wavelength Tunable Laser Based on Distributed Reflectors with Deep Submicron Slots

Li Zou,Lei Wang,Tingting Yu,Jian-Jun He

DOI: https://doi.org/10.1117/12.2001584

2012-01-01

Abstract:To reduce the cost of wavelength tunable lasers, the structure and fabrication methods of a wavelength tunable laser based on distributed reflectors with deep-submicron slots are proposed. By using a pillar reversing technique, the device is fabricated with standard UV lithography. The features and benefits of reflectors with deep-submicron slots are simulated and explained. As high as 47dB side mode suppression ratio and 50nm tuning range around 1550nm is achieved.
Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 mu m is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjusting the injection currents applied to the cascaded rectangular rings synchronously, wavelength tuning of 35 channels with 100 GHz spacing is achieved with side mode suppression ratio up to 40.5 dB.
Widely Tunable Single-Mode Mid-Infrared Interband Cascade Lasers

Hanting Yang,Jingli Gong,Jian-Jun He,Rui Q. Yang

DOI: https://doi.org/10.1364/lacsea.2020.lw3e.2

2020-01-01

Abstract:We report the first demonstration of widely tunable single-mode mid-infrared interband cascade lasers based on a V-coupled cavity. The obtained wavelength tuning range is 60 nm with a side-mode suppression ratio (SMSR) over 20dB.
Single-Electrode Controlled Four-Section Coupled-Cavity Tunable Laser

Yin Wang,Youguang Yang,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2013.2265232

IF: 2.6

2013-01-01

IEEE Photonics Technology Letters

Abstract:We report the design and experimental results of a single-electrode controlled four-section coupled-cavity tunable laser. The device is fabricated by standard photolithography without epitaxial regrowth. A nine-channel switching of 100 GHz spacing, which is tuned by current injection on a single electrode, is demonstrated. The side-mode-suppression-ratio of each channel is between 31 and 37 dB and the power variation of all channels is <;1.6 dB. The performances under different temperatures are investigated.
Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Jingli Gong,Hanting Yang,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575270

2020-01-01

Abstract:Mid-infrared semiconductor lasers have a wide range of applications in gas sensing, environmental monitoring, medical diagnosis and other fields. The V-coupled cavity laser (VCCL) approach has been successfully applied in the communication band to achieve single-mode operation with a wide tuning range because of its advantages of no grating, compact structure and simple wavelength control. In this paper, the concept of V-coupled cavity is introduced to the interband cascaded lasers, and a monolithically integrated mid-infrared widely tunable single-mode laser is developed. In addition, we experimentally demonstrated a simple and general algorithm for wavelength tuning controlled by two electrodes synchronously, and realized quasi-continuous tuning of single-mode wavelength in mid-infrared interband cascade laser based on the V-coupled cavity configuration for the first time. In the tuning process, the injection current of the short cavity remains unchanged, and the stepped increase of the long cavity current is equivalent to the realization of discrete tuning with the channel spacing of 1.1 nm determined by the short cavity. With the increase of the injection current of the coupler electrode while fixing the long cavity current, the thermo-optic effect caused by the coupler current will cause the refractive index of the two FP cavities to change together, thus realizing the fine tuning of the laser wavelength. A total tuning range of 53.2 nm has been achieved, from 2.8244 mu m to 2.8776 mu m, with the temperature adjusted from 110K to 120K.
Monolithic tunable lasers for low cost DWDM networks

Jian-jun He,Sen Zhang,Jianjun Meng,X. Xiong,Huabin Xing,H. Jin,Di Zhong,Jiasheng Zhao

2017-01-01

Abstract:Low-cost tunable lasers are key enablers for next-generation dense wavelength division multiplexing (DWDM) based access and metro networks. At present, tunable lasers are mostly deployed in long-haul optical transmission systems due to their high cost resulting from fabrication and operation complexity for structures such as sampled grating distributed Bragg reflector (SGDBR) [1,2]. For wide deployment of the WDM technology in metro, access, and data center networks, the cost reduction of tunable lasers has become a key issue. Recently, a simple and compact tunable V-cavity laser (VCL) has been proposed and demonstrated [3-4]. By using a specially designed halfwave coupler between two Fabry-Perot lasers, a widely-tunable single-mode laser with high side mode suppression ratio (SMSR) is achieved without requiring complex gratings. Discrete wavelength tuning up to 50 channels at 100 GHz spacing has been demonstrated experimentally with a simple tuning algorithm [5]. Single-electrode controlled fast wavelength tuning in the order of ~10ns has also been achieved by using a quantum well intermixed tuning section [6].
Enhanced Tuning Performance of In-Series REC-DFB Laser Array

Pan Dai,Zhenxing Sun,Zhuo Chen,Jun Lu,Feng Wang,Hua Tong,Rulei Xiao,Xiangfei Chen

DOI: https://doi.org/10.1109/lpt.2021.3119710

IF: 2.6

2021-12-01

IEEE Photonics Technology Letters

Abstract:In this study, a tunable in-series multi-wavelength distributed feedback laser array (DFB-MLA) based on reconstruction-equivalent-chirp (REC) technique with simple wavelength tuning scheme is presented and experimentally demonstrated. Unlike traditional DFB laser tuned by thermal-electric cooler (TEC), the proposed laser tuned by injection current can realize faster wavelength-tuning and reduce TEC power consumption. By comparing the thermal influence of different structures of heatsink blocks, several optimized block structures are selected for appropriate thermal conductivity and controllable heat dissipation, resulting in a broad and continuous wavelength tuning range. The proposed in-series DFB-MLA on optimized heatsink achieves better tuning performance with a wavelength tuning range of ~2.4 nm per channel from 40 to 120 mA and stable output power of over 20 mW compared to the laser mounted on the standard heatsink block with the tuning range of 1.4 nm per channel. Furthermore, the tunable laser keeps good single-mode stability, with a side mode suppressing ratio (SMSR) of over 40 dB. Thus, this study provides a new perspective for designing a low-cost continuous tunable semiconductor laser with a simple tuning mechanism in the future.

engineering, electrical & electronic,optics,physics, applied
Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Qi Chen,Zhongwen Wang,Jiasheng Zhao,Jianjun Meng,Guocai Song,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2022.3198520

IF: 2.6

2022-01-01

IEEE Photonics Technology Letters

Abstract:We present the monolithic integrated widely tunable V-cavity laser and traveling wave Mach-Zehnder modulator operating in the C-band. A wide wavelength tuning of 64 channels from 1513 nm to 1565 nm is obtained with SMSRs mostly over 40 dB. The $\text{V}_{\pi }$ is 5.5 V and the static extinction ratio is 14 dB. The 3-dB electro-optic bandwidth is measured to be 14.2 GHz. By optimizing the device structure and thickness of intrinsic region on a semi-insulating substrate wafer, a theoretical bandwidth over 40 GHz can be achieved.
Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 μm is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjustin...
Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Zhanyi Wang,Jingli Gong,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1109/icocn59242.2023.10236288

2023-01-01

Abstract:We present a widely tunable single-mode interband cascade laser (ICL) emitting at 3.3 μm based on the V-coupled cavity employing a double-trench structure, with aside-mode suppression ratio of up to 36 dB.
Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Lin Wu,Sen Zhang,Xiaolu Liao,Li Zou

DOI: https://doi.org/10.1117/12.2085701

2015-01-01

Abstract:Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors

Jia Guo,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/cleopr.2018.w1j.5

2018-01-01

Abstract:We report the design concept and experimental results of a tunable half-wave coupled-cavity laser using two back-to-back corner-connected total internal reflection reflectors. A wide tuning range of 26.4nm is achieved with 40dB SMSR.
Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Zhanyi Wang,Jingli Gong,Jian-Jun He,Lu Li,Rui Q. Yang,James A. Gupta

DOI: https://doi.org/10.1364/ol.391308

IF: 3.6

2020-01-01

Optics Letters

Abstract:We demonstrate widely tunable single-mode V-coupled-cavity lasers emitting at wavelengths near 3 µm based on a type-II interband cascade (IC) structure. The mode selection is achieved using a half-wave V-coupler designed for the IC structure in the mid-infrared range. The laser waveguides and cavity structure are deeply etched in a single etching step, without any grating. By changing the injection current at a fixed heat-sink temperature, a tuning range over 35 nm can be achieved with a side-mode suppression-ratio up to 28 dB. The tuning range can be extended to 60 nm when combined with the adjustments of the heat-sink temperature.
Current-Tuned Tunable In-Series DFB Laser Array Assisted With Thin Film Heater

Zizhuo Li,Zhenxing Sun,Jie Zhao,Zhenzhen Xu,Zijiang Yang,Zhuoying Wang,Yue Zhang,Zhiqian Yin,Jiaqiang Nie,Wenxuan Wang,Rulei Xiao,Xiangfei Chen

DOI: https://doi.org/10.1109/lpt.2024.3411047

IF: 2.6

2024-06-22

IEEE Photonics Technology Letters

Abstract:In this letter, we propose and demonstrate a tunable in-series distributed feedback (DFB) laser array, and the wavelength is continuously tuned with the assistance of the monolithically integrated thin-film heater. Compared with an in-parallel laser array with an optical combiner, the proposed in-series DFB laser array avoids significant power loss resulting from the optical combiner. The three-section structure is utilized to suppress the grating crosstalk among the in-series laser array and guarantees single-mode stabilities. Besides, the reconstruction-equivalent-chirp technique is utilized to simplify grating fabrication and enhance the precise control of the grating phase. Four lasers with wavelength spacings of 2.4 nm are integrated into the in-series laser array and the Ti/Pt thin film heaters are monolithically integrated near the waveguides of each laser unit. The wavelength of the proposed structure is coarsely tuned by selecting the working laser and finely tuned by adjusting the injection current to the laser unit and the thin-film heaters. 9.6 nm continuous wavelength tuning range and fast wavelength tuning are obtained for the proposed in-series laser array without adjusting the temperature of the thermal-electric cooler (TEC). The proposed structure provides a solution for the wavelength tunable laser, which is promised to be used in the dense wavelength division multiplexing (DWDM) systems.

engineering, electrical & electronic,optics,physics, applied
Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Lin Wu,Zhipeng Hu,Jian-Jun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.af1b.2

2013-01-01

Abstract:A widely tunable semiconductor laser based on double half-wave-coupled rectangular ring resonators is designed and simulated. By employing the Vernier effect between the rectangular ring resonators, a large tuning range of 40nm is achieved, while the corresponding threshold gain difference and the SMSR is 4.5cm−1 and 46dB, respectively.
Wideband Tunable REC-DFB Laser Array Using Thin-Film Heaters on the Submount

Pan Dai,Zhuo Chen,Zhenxing Sun,Hantian Ge,Ji Dai,Jun Lu,Feng Wang,Rulei Xiao,Hua Tong,Rongrong Dou,Xiangfei Chen

DOI: https://doi.org/10.3788/col202321.011406

IF: 2.56

2022-01-01

Chinese Optics Letters

Abstract:A wideband wavelength-tunable 4 x 5 distributed feedback (DFB) semiconductor laser array based on the reconstructionequivalent-chirp (REC) technique using a simple tuning scheme is demonstrated. It consists of 20 DFB lasers with 4 x 5 matrix interleaving distributions, two-level cascaded Y-branch optical combiners, and one active semiconductor optical amplifier (SOA), all in-series integrated on one chip. Unlike the traditional thermal-electric cooler (TEC)-based wavelength-tuning scheme, the tunable 4 x 5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuning range using TaN thin-film heaters integrated on the AlN submount. By changing the injection current of the TaN resistor from 0 to 190 mA, the proposed tunable laser achieves a wavelength-tuning range of similar to 2.5 nm per channel and a total tuning of over 50 nm. This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.

A Monolithic Tunable Laser Based on Cascading of Distributed Feedback Laser Array

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Wavelength Tunable Laser Based on Distributed Reflectors with Deep Submicron Slots

Tunable V-Cavity Semiconductor Laser And Modules

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Widely Tunable Single-Mode Mid-Infrared Interband Cascade Lasers

Single-Electrode Controlled Four-Section Coupled-Cavity Tunable Laser

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Monolithic tunable lasers for low cost DWDM networks

Enhanced Tuning Performance of In-Series REC-DFB Laser Array

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Current-Tuned Tunable In-Series DFB Laser Array Assisted With Thin Film Heater

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Wideband Tunable REC-DFB Laser Array Using Thin-Film Heaters on the Submount