Optoelectronic Properties for Main Group Element-Bridged Ladder Compounds

Liu Shu-Juan,Ma Ting-Chun,Xu Wen-Juan,Liu Xiang-Mei,Zhao Qiang,Huang Yan-Qin,Huang Wei

DOI: https://doi.org/10.3866/pku.whxb201208272

2012-01-01

Abstract:Ladder-type pi-conjugated molecules with fully ring-fused structures have fascinating optoelectronic properties because the flattened pi-conjugated framework can eliminate conformational disorder and effectively enhance pi-conjugation. Their optoelectronic properties can be modified by incorporating main group elements into the ladder skeleton. Heteroatom-bridges not only stiffen the skeleton but also contribute to the electronic structure through orbital interaction between the main group elements and the pi-conjugated skeleton. Herein, the structural, electronic, and optical properties of bis-and tetrakis-bridged (C, Si or P-bridged) stilbene derivatives were investigated by density functional theory (DFT) and time-dependent DFT (TDDFT) to provide theoretical understanding and predictions for these compounds. The electronic structures of these pi-conjugated skeletons could be tuned by the incorporated elements. Compared with bis-bridged analogs, tetrakis-bridged derivatives exhibited substantial red shifts in the absorption and shorter radiative lifetimes because of extended pi-conjugation. In addition, the energy barrier for the injection and transport rates of the holes and electrons was evaluated using ionization potentials, electronic affinities, and reorganization energies (lambda). Compared to bis-bridged analogs, tetrakis-bridged derivatives exhibit higher accepting abilities for both holes and electrons.