Abstract:Electrically tunable metasurfaces open new doors for manipulating the phase, amplitude and polarization of light in ultrathin layers. Compared with metal assisted metasurfaces, all-dielectric transmission metasurfaces-with outstanding feature of low loss, especially incorporating with new electro-optical materials-show great potential for the next generation flat optics. In this study, by combining the epsilon-near-zero effect in indium tin oxide (ITO) with guided-mode resonance, we propose novel electrically tunable all-dielectric metasurface architectures with versatile functions for widespread potential application. The inserted periodic ITO and hafnium oxide layers sandwiched in silicon act as two metal-oxide-semiconductor capacitors in a single period to disturb the resonance wavelength in the near-infrared spectral range under the voltage applied. For the one-dimensional structure, the transmittances of this metasurface at 1512 and 1510 nm change 20 and -14 dB under 0∼5 V bias voltage, respectively. In addition, the bilayer structure performs well in double-waveband applications, indicating that more layers can support more operation wavebands. Meanwhile, the two-dimensional structure works as a polarization insensitive device when setting the same structural parameters in both orthogonal directions. The proposed architecture, with various merits including ultra-compact size, high-speed and complementary metal-oxide-semiconductor compatibility, provides a multifunctional and multi-degree-of-freedom design, as well as enormous potential applications in more complicated flat optics.

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