Perpendicular magnetic anisotropy of Pd/Co 2 MnSi/AlN/Pd multilayer films
Xiaoqi Qin,Bin Guo,Jiaxing Tan,Xianwu Xiu,Wentian Cao,Shuyun Wang
DOI: https://doi.org/10.1016/j.jmmm.2024.172143
IF: 3.097
2024-05-14
Journal of Magnetism and Magnetic Materials
Abstract:In this paper, the perpendicular magnetic anisotropy(PMA)of Pd/Co 2 MnSi (CMS)/AlN/Pd multilayer film is studied, which is designed based on the two-interface interaction, the orbital hybridization effect of Pd5d-Co3d electrons at the Pd/CMS interface and the orbital hybridization effect of Co3d-N2p electrons at the CMS/AlN interface. Compared with the Pd/CMS/Pd multilayer film, the PMA of the Pd/CMS/AlN/Pd structure shows significant enhancement with the insertion of the AlN layer. The Hall resistance ( R Hall ) of the Pd/CMS/AlN/Pd structure reached 0.02 Ω (increased by 300 %) and the coercive force ( H c ) is 388 Oe (increased by about 76 %). The magnetic anisotropic energy density ( K eff ) is 0.61Merg/cm 3 (increased by about 135 %). The PMA was optimized with the film factor (layer thickness) of Pd(6 nm)/CMS(5 nm)/AlN(6 nm)/Pd(6 nm). The X-Ray Diffraction(XRD)and High Resolution Transmission Electron Microscope(HRTEM)analysis showed that the PMA is affected by the crystallinity and interface quality of multilayer films.
materials science, multidisciplinary,physics, condensed matter