Interfacial Characterization of Two-Dimensional Van Der Waals Devices by Transmission Electron Microscopy
Quanlin Guo,Tian Gu,Cong Wang,Zhibin Zhang,Kaihui Liu
DOI: https://doi.org/10.1360/tb-2022-1318
2023-01-01
Chinese Science Bulletin (Chinese Version)
Abstract:In the post-Moore era, due to their extreme atomic-level thickness, two-dimensional (2D) materials are expected to overcome the challenges of low performance and high power consumption caused by short channel effects, and are considered to be crucial complements to silicon in the next generation of semiconductor technology. 2D materials include conductors (which can be used as electrodes), insulators (which can be used as gates), and semiconductors with different electronic structures, which naturally meet the requirements of the semiconductor industry. They play an important role in the rapid development of integrated circuits. van der Waals (vdW) devices based on 2D materials have strong gate control capabilities, good silicon-based process compatibility, and fewer surface dangling bonds and they are receiving extensive attention in the field of microelectronic devices. The actual large-scale application of 2D vdW devices must be based on the crystal growth of high-quality 2D materials, the controllable design of heterostructures, and the good contacts of vdW devices. The performance of the devices is greatly influenced by the interfaces. For example, the quality of the material is regulated by the substrate surface, and the performance of electrical devices is affected by the contact resistance of the interface. Therefore, the interfacial characterization is crucial for the monitoring of material quality and the further optimization of device fabrication. Considering the atomic thickness of 2D materials, the interfacial characterization technology should have higher spatial resolution than atomic scale. Although atomic force microscopy and scanning tunneling microscopy based on surface modes also have atomic-level resolution, they can only detect surface information and cannot achieve structural characterization in the vertical direction. Using electron beams to obtain images, whose De Broglie wavelength (about 0.002 nm) is much smaller than the wavelength of visible light (about 400 nm), the transmission electron microscopy (TEM) can break through the optical diffraction limit to achieve extremely high spatial resolution; at the same time, it can also use diverse sample preparation techniques to prepare cross-sectional samples. In order to characterize the interface structure in the vertical direction, it can be used as a favorable technique for studying the interface of two-dimensional van der Waals devices, and can simultaneously study the surface morphology and internal structure of two-dimensional van der Waals devices. Nowadays, the transmission electron microscope equipped with a spherical aberration corrector has a spatial resolution as high as 40 pm, combined with energy-dispersive X-ray spectroscopy (EDX) and electron energy loss spectroscopy (EELS), it can directly detect the structural information and physical and chemical properties of materials. Therefore, TEM can provide intuitive characterization conclusions and targeted guidance for in-depth understanding of atomic-scale material preparation and device construction processes. Combining the sub-Angstrom resolution, the accurate element resolution and the in-situ detection capability, TEM shows its advantage in characterizing the 2D vdW devices at interfaces. In this review, we comprehensively overview the TEM characterization of three main interfaces in the fabrication of 2D vdW devices, including the interface between 2D materials and substrates, the lateral interface and the vertical interface in the heterostructures, and the contact interface between metal electrodes and 2D materials. Focusing on the TEM characterization of the three interfaces in 2D material van der Waals devices, this review summarizes the research on the mechanism of crystal preparation, focusing on the development status of van der Waals heterojunctions and van der Waals contacts in two-dimensional electronic devices, hoping to provide a reference for the disruptive technological change of two-dimensional materials in the field of very large scale integration circuit.