Total Dose Radiation Hardened Power VDMOS Device
李泽宏,张磊,谭开洲
DOI: https://doi.org/10.3969/j.issn.1001-0548.2008.04.038
2008-01-01
Abstract:A total dose radiation hardened power VDMOS device is fabricated by growing the thin gate SiO2 after the P-body diffusion and using a double passivation layer (Si3N4-SiO2). The experimental results are presented and fit 2D simulation. For the specified power VDMOS device, the threshold voltage shifts is only ?1 V at a x-ray total dose of 972×103 rad (Si). It is demonstrated that the total dose radiation tolerance of the power VDMOS device are improved significantly.
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