BPCLC: an Efficient Write Buffer Management Scheme for Flash-Based Solid State Disks.
Hui Zhao,Peiquan Jin,Puyuan Yang,Lihua Yue
DOI: https://doi.org/10.4156/jdcta.vol4.issue6.15
2010-01-01
International Journal of Digital Content Technology and its Applications
Abstract:Flash memory has been widely used for storage devices in various embedded systems and enterprise computing environment, due to its shock-resistance, low power consumption, non-volatile, and high I/O speed. However, its physical characteristics impose several limitations in the design of flash-based solid state disks (SSDs). For example, its write operation costs much more time than read operation, and data in flash memory can not be overwritten before being erased. In particular, random write operations in flash memory have a very poor performance. To overcome these limitations, we propose a page-clustered LRU write buffer management scheme for flash-based SSDs, which is named BPCLC (Block Padding Cold and Large Cluster first). BPCLC adopts a new block padding technique to improve the write performance of flash-based SSDs. We conduct a trace-driven experiment and use two types of workloads to compare the performance of BPCLC with three competitors including FAB, BPLRU, and CLC. The results show that in both types of workloads, BPCLC outperforms its competitors with respect to write count, erase count, merge count, and overall I/O overhead.