Abstract:Nonequilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to excitation by optical illumination, such hot carriers can also be generated due to electron tunnelling, a quantum-mechanical effect which allows the transport of electrons across a nanoscale junction between two conducting electrodes. Here we study electron tunnelling effects in electrically-driven plasmonic nanorod metamaterials containing up to 10^11 tunnel junctions per square centimeters and show that the generation of hot electrons makes the tunnel junctions highly reactive, facilitating strongly confined chemical reactions which can in turn modulate the tunnelling processes. To form nanometer scale gaps for electron tunneling, an overgrown plasmonic nanorod metamaterial (Au nanorod assembly electrochemically grown in a substrate-supported, thin-film porous aluminum oxide template) was first ion-milled at an oblique angle (75º with respect to the normal to the sample surface) to make the embedded Au nanorods ~1 nm shorter than surrounding aluminum oxide. Then, a droplet of eutectic gallium and indium (EGaIn) was added onto the sample surface working as an upper electrode, forming millions of ~1-nm air gaps between the Au nanorod tips and the EGaIn. When a low voltage (2.5 V) was applied between the Au nanorods and the EGaIn, a strong light emission was observed from the substrate side (~ 4 mm2 in size) due to the radiative decay of plasmonic modes excited in the nanorod metamaterial by inelastic tunnelling electrons. With an increasing applied bias, the intensity of emission increases gradually, and is accompanied by a blue-shift of the cutoff wavelength (the energies of the emitted photons are always less than the energy of tunnelling electrons). Apart from the excitation of plasmons and photons by the inelastic tunnelling electrons, hot electrons are generated simultaneously in the tips of Au nanorods by the elastic tunnelling electrons while leaving hot holes in the EGaIn. The large flux of energetic hot electrons makes the otherwise inert tunnel junctions highly reactive, facilitating the oxidation and reduction reactions in the junctions involving O2 and H2 molecules, respectively. These reactions are monitored either optically by changes in the intensity of light emission (~50%) resulting from the radiative decay of tunnelling-generated surface plasmons, or electrically via tunnelling current variations (~10%). Electrically-driven plasmonic nanorod metamaterial with reactive tunnel junctions comprises a fertile platform merging photonics, electronics and chemistry at the nanoscale, opening up opportunities for developing electron tunnelling-based devices, such as sensors, light sources, nanoreactors, modulators and photodetectors.

On-chip Molecular Electronic Plasmon Sources Based on Self-Assembled Monolayer Tunnel Junctions

On-chip trans-dimensional plasmonic router

Plasmon Hybridization Induced by Quasi Bound State in the Continuum of Graphene Metasurfaces Oriented for High-Accuracy Polarization-Insensitive Two-Dimensional Sensors

Plasmon-driven Nanowire Actuators for On-Chip Manipulation

Molecular Tunnel Junction-Controlled High-Order Charge Transfer Plasmon and Fano Resonances

Plasmonic Tunnel Junctions(Invited)

Molecular Plasmonics with Metamaterials

Reactive Tunnel Junctions in Electrically Driven Plasmonic Nanorod Metamaterials

Hot Electrons in Electrically Driven Plasmonic Nanorod Metamaterials (conference Presentation)

Excitation of Surface Plasmons by Inelastic Electron Tunneling

Highly efficient tunable and localized on-chip electrical plasmon source using protruded metal-insulator-metal structure

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Silicon-Based Optoelectronics Enhanced by Hybrid Plasmon Polaritons: Bridging Dielectric Photonics and Nanoplasmonics

Key components for nano-assembled plasmon-excited single molecule non-linear devices

On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot

Single-Nanoparticle Plasmonic Electro-Optic Modulator Based on Mos2 Monolayers

Charge Transfer Plasmons Enabled by Supramolecular Plug: From Optoelectronic Switching to Enhanced Chiral Sensing

Controlling Localized Plasmons via an Atomistic Approach: Attainment of Site-Selective Activation inside a Single Molecule

Molecular scale nanophotonics: hot carriers, strong coupling, and electrically driven plasmonic processes

CMOS‐Compatible Electronic–Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes

Electronically Controlled Semiconductor Nanoparticle Array for Tunable Plasmonic Metasurfaces