Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

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Spin-valley magnetism on the triangular moiré lattice with SU(4) breaking interactions

Topological superconductivity, ferromagnetism, and valley-polarized phases in moire systems: Renormalization group analysis for twisted double bilayer graphene

Inter-Valley Spiral Order In The Mott Insulating State Of A Heterostructure Of Trilayer Graphene-Boron Nitride

Topological and nematic superconductivity mediated by ferro-SU(4) fluctuations in twisted bilayer graphene

Topological flat bands, valley polarization, and interband superconductivity in magic-angle twisted bilayer graphene with proximitized spin-orbit couplings

Spin-Polarized Nematic Order, Quantum Valley Hall States, and Field-Tunable Topological Transitions in Twisted Multilayer Graphene Systems

Spontaneous isospin polarization and quantum Hall ferromagnetism in a rhombohedral trilayer graphene superlattice

Correlation-driven topological and valley states in monolayer VSi 2 P 4

Valley polarization, magnetization, and superconductivity in bilayer graphene near the van Hove singularity

Isospin order in superconducting magic-angle twisted trilayer graphene

Quantum Monte Carlo Study of Magnetic Ordering and Superconducting Pairing Symmetry in Twisted Bilayer Graphene

Intravalley spin-polarized superconductivity in rhombohedral tetralayer graphene

Topological Superconductivity in Twisted Multilayer Graphene

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Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review

Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Strong-coupling topological states and phase transitions in helical trilayer graphene

Intertwined Magnetism and Superconductivity in Isolated Correlated Flat Bands

The magnetic $Z_2$ topological insulator on the AA-stacked bilayer graphene

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer