Structures, Magnetism and Transport Properties of the Potential Spin-Gapless Semiconductor CoFeMnSi Alloy

Huarui Fu,Yunlong Li,Li Ma,Caiyin You,Qing Zhang,Na Tian
DOI: https://doi.org/10.1016/j.jmmm.2018.10.040
IF: 3.097
2018-01-01
Journal of Magnetism and Magnetic Materials
Abstract:The polycrystalline CoFeMnSi alloy with a potential spin gapless semiconductor (SGS) behavior was prepared by arc melting. The structures, magnetism and transport properties of CoFeMnSi alloy were investigated in detail. The occurrence of (1 1 1) superlattice XRD peak indicates the highly ordered Y-type structure of CoFeMnSi alloy. The saturation magnetization is around 3.49 mu(B)/f.u and the Curie temperature is about 763 K. The transport properties exhibit a semiconducting-like behavior and the resistivity is about 269 mu Omega cm at 300 K. The carrier concentration almost shows a non-dependence of temperature, which is different from that of traditional semiconductor, presenting a typical characteristic of spin gapless semiconductor. The carrier concentration and carrier mobility measured at 300 K are 4.9 x 10(20) cm(-3) and 46 cm(2)/V.s, respectively.
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