AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

Chao Yang,Xiaorong Luo,Anbang Zhang,Siyu Deng,Dongfa Ouyang,Fu Peng,Jie Wei,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1109/TED.2018.2868104

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:In this brief, an AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with pulsed laser deposited AlN interface protection layer (IPL) and trench termination (T2) structure is experimentally and theoretically investigated. The AlN IPL could effectively improve the interface quality and reduce the interface trap density, which is verified by frequency-dependent C-V ...