An Investigation of Dielectric, Piezoelectric Properties and Microstructures of Bi0.5na0.5tio3-Batio3-Bi0.5k0.5tio3 Lead-Free Piezoelectric Ceramics Doped with K2alnbo5 Compound
Gang Liu,Wentao Jiang,Kaihua Liu,Xiaokui Liu,Chunlin Song,Yan,Li Jin
DOI: https://doi.org/10.1007/s11664-017-5545-2
IF: 2.1
2017-01-01
Journal of Electronic Materials
Abstract:The effect of K2AlNbO5 compound acting as both donor and accepter on the phase, microstructures and electrical properties of the 0.9362(Bi0.5Na0.5)TiO3-0.0637BaTiO3-0.02(Bi0.5K0.5)TiO3 [(1−x)(0.9163BNT-0.0637BT-0.02BKT)-x(K2AlNbO5)] (BNKBT-1000xKAN) ternary lead-free piezoelectric ceramics was systematically investigated. When doping content of K2AlNbO5 was varied from 0 to 0.009, the BNKBT-1000xKAN ceramics showed a single perovskite structure, and the phase structure transferred from a rhombohedral-tetragonal coexistent morphotropic phase boundaries zone to a tetragonal zone. The x-ray photoelectron spectroscopy analysis indicated that the chemical valence of the Nb and Al element are 5+ and 3+, respectively. Strong relaxor characteristics were revealed by the temperature-dependent dielectric properties of the ceramics. Typical square polarization-electric field (P-E) hysteresis loops were observed in the samples with doping content lower than 0.005. However, with further increasing the doping content (x = 0.007 and 0.009), round P-E hysteresis loops were observed due to the high conductivity of these samples. Moreover, when the doping content was less than 0.005, the ceramic samples exhibited good piezoelectric properties. Specially, when the doping content was 0.001, the piezoelectric constant d 33 and electromechanical coupling coefficient k p of the sample were 197 pC/N and 22%, respectively. However, further addition would deteriorate both the dielectric and piezoelectric properties.