Construction of heterojunction ZnFe2O4/ZnO/Ag by using ZnO and Ag nanoparticles to modify ZnFe2O4 and its photocatalytic properties under visible light

Jun Su,Qingkun Shang,Tongtong Guo,Shuang Yang,Xinyue Wang,Qian Ma,Hongyu Guan,Feng Xu,Shik Chi Tsang

DOI: https://doi.org/10.1016/j.matchemphys.2018.08.003

IF: 4.778

2018-01-01

Materials Chemistry and Physics

Abstract:In this study, a narrow band gap semiconductor ZnFe2O4 is prepared first and then a wide band gap semiconductor ZnO is used to modify it by using hydrothermal method under the participation of the chelating agent nitrilotriacetic acid (NTA), which will be removed in the process of high temperature baking. The structure and composition of ZnFe2O4/ZnO heterojunction were characterized by using powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and UV–Vis diffuse reflectance spectra (DRS). In order to improve the photocatalytic activity of ZnFe2O4/ZnO heterojunction under visible light irradiation Ag nanoparticles were loaded on its surface by using a very simple and special method namely silver mirror reaction at room temperature without agitation. The methyl orange (MO) was taken as model dyes to illustrate the photocatalytic performance of synthesized products on visible light irradiation. Maximum degradation of 84% for MO was achieved when one 85 W ordinary household energy-saving lamp was used as light source and ZnFe2O4/ZnO/Ag as multicomponent photocatalyst.