Abstract:The evolution of point defects is crucial in determining the radiation resistance of materials in a fusion environment. A comprehensive investigation of diffusion mechanisms for intrinsic point defects in six stoichiometric tungsten borides (W x B y ), including W 2 B, WB, WB 2 , W 2 B 5 , WB 3 and WB 4 , has been performed using first-principles density functional theory (DFT) calculations based on the W boride with a minimum formation enthalpy for each involved stoichiometry. The calculations indicate that boron point defects are more mobile than W point defects in each W boride. The activation energy of the W vacancy (V W ) diffusion in W borides increases with B content. In general, with increasing B content, the activation energy for one-dimensional (1D) diffusion of B vacancy (V B ) slightly decreases, while the activation energy for 3D diffusion of V B does not show a clear trend with B content. V W in B-rich W x B y (y/x > 1) enhances the mobility of adjacent B lattice atoms. In W 2 B, WB and WB 2 compounds, complex configurations of W interstitials (I W ), which involve B displacement, are more energetically stable than single W atoms at interstitial sites; while no or less stable complexes of W interstitials are observed in W 2 B 5 , WB 3 or WB 4 . The activation energy for 1D/2D diffusion of I W in B-rich compounds increases with B content, and the 3D diffusion of I W in WB 3 has the largest activation energy. The activation energy for 1D/2D diffusion of B interstitials (I B ) generally increases with B content; however, the activation energy for 3D diffusion of I B is dependent on specific W boride composites. This study is helpful in building a database related to the diffusion behavior of defects in stoichiometric W borides. It is important to note pre-existing, as well as irradiation-induced, defects in non-stoichiometric W x B y will impact the diffusion kinetics of all intrinsic species, which needs further investigation.

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