A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO4{010}–Au–Cu2O Z‐Scheme Photocatalyst for Efficient Charge Separation

Chenguang Zhou,Shaomang Wang,Zongyan Zhao,Zhan Shi,Shicheng Yan,Zhigang Zou
DOI: https://doi.org/10.1002/adfm.201801214
IF: 19
2018-01-01
Advanced Functional Materials
Abstract:Interfacial charge separation and transfer are the main challenges of efficient semiconductor-based Z-scheme photocatalytic systems. Here, it is discovered that a Schottky junction at the interface between the BiVO4 {010} facet and Au is an efficient electron-transfer route useful for constructing a high-performance BiVO4{010}-Au-Cu2O Z-scheme photocatalyst. Spectroscopic and computational studies reveal that hot electrons in BiVO4 {010} more easily cross the Schottky barrier to expedite the migration from BiVO4 {010} to Au and are subsequently captured by the excited holes in Cu2O. This crystal-facet-dependent electron shuttle allows the long-lived holes and electrons to stay in the valence band of BiVO4 and conduction band of Cu2O, respectively, contributing to improved light-driven CO2 reduction. This unique semiconductor crystal-facet sandwich structure will provide an innovative strategy for rational design of advanced Z-scheme photocatalysts.
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