Emergent Ferromagnetism: Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO<sub>3</sub> Epitaxial Thin Film System (Adv. Electron. Mater. 6/2018)

Wei Niu,Wenqing Liu,Min Gu,Yongda Chen,Xiaoqian Zhang,Minhao Zhang,Yequan Chen,Ji Wang,Jun Du,Fengqi Song,Xiaoqing Pan,Nini Pryds,Xuefeng Wang,Peng Wang,Yongbing Xu,Yunzhong Chen,Rong Zhang
DOI: https://doi.org/10.1002/aelm.201870030
IF: 6.2
2018-01-01
Advanced Electronic Materials
Abstract:Emergent ferromagnetism in an otherwise antiferromagnetic LaMnO3-based heterostructure attributable to the cation-vacancy-induced oxygen excess effect through direct observation of multivalence Mn is reported by Xuefeng Wang, Peng Wang, Yongbing Xu, Yunzhong Chen, and co-workers in article number 1800055. The ferromagnetism is mediated by the Mn3+-O-Mn4+ double-exchange mechanism. It provides a hitherto unexplored multivalence state of Mn on the emergent ferromagnetism in manganite thin films.
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