Electronic Properties of G-C3n4/cds Heterojunction from the First-Principles

Jinjin Li,Wei,Cong Mu,Baibiao Huang,Ying Dai
DOI: https://doi.org/10.1016/j.physe.2018.04.023
2018-01-01
Abstract:In this work, electronic structures of two-dimensional (2D) g-C3N4/CdS heterojunction are systematically investigated by means of the first-principles calculations. Our results indicate that g-C3N4 monolayer and CdS monolayer form a standard type-Ⅱ heterojunction, with both the valence band maximum (VBM) and the conduction band minimum (CBM) of CdS monolayer higher than those of g-C3N4 monolayer, and the water reduction and oxidation potentials lie in-between the VBM and CBM of g-C3N4/CdS heterojunction. Moreover, the charge density difference of g-C3N4/CdS heterojunction indicates that an internal electric field forms between g-C3N4 monolayer and CdS monolayer, which will further restrain the recombination of photogenerated carriers. These results suggest that g-C3N4/CdS heterojunction is beneficial to enhance the efficiency of photocatalytic water splitting under visible-light irradiation.
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