Abstract:Cubic boron nitride (c-BN) is a promising ultra-wide bandgap semiconductor for high-power electronic devices. Its thermal conductivity can be substantially modified by controlling the isotope abundance and by the quality of a single crystal. Consequently, an understanding of the phonon transport in c-BN crystals, with both vacancy defects and isotopic disorders at near-ambient temperatures, is of practical importance. In the present study, a neural network potential (NNP) for c-BN has been developed, which has facilitated the investigation of phonon properties under these circumstances. As a result, the phonon dispersion and the three- and four-phonon scattering rates that were predicted with this NNP were in close agreement with those obtained from density-functional theory (DFT) calculations. The thermal conductivities of the c-BN crystals were also investigated, with boron (B) vacancies ranging from 0.0% to 0.6%, by using equilibrium molecular dynamics simulations based on the Green-Kubo formula. These simulations accurately capture vacancy-induced phonon softening, localized vibration modes, and phonon localization effects. As has previously been experimentally prepared, four isotope-modified c-BN samples were selected for analyses in the evaluation of the impact of isotopic disorders. The calculated thermal conductivities aligned well with the DFT benchmarks. In addition, the present study was extended to include a c-BN crystal with a natural abundance of B atoms, which also contained B vacancies. Reasonable thermal conductivities and vibrational characteristics, within the temperature range of 250–500 K, were then obtained.

Effects of Isotopic Substitution on the Phonons of Van Der Waals Crystals: the Case of Hexagonal Boron Nitride

Effect of Isotope Disorder on the Raman Spectra of Cubic Boron Arsenide

Isotope engineering of van der Waals interactions in hexagonal boron nitride

Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN

Control of the phonon band gap with isotopes in hexagonal boron nitride

Influence of Isotopic Substitution on the Anharmonicity of the Interlayer Shear Mode of H -BN

Boron Isotope Effects on Raman Scattering in Bulk BN, BP, and BAs: A Density-Functional Theory Study

Isotope Effects on the Optical Phonons of Cubic Boron Phosphide

Phonons of hexagonal BN under pressure: Effects of isotopic composition

Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride

Thickness-scaling Phonon Resonance: A Systematic Study of Hexagonal Boron Nitride from Monolayers to Bulk Crystals

Helicity exchange and symmetry breaking of in-plane phonon scattering of h-BN probed by polarized Raman spectroscopy

Hexagonal Boron Nitride Phononic Crystal Waveguides

Boron and nitrogen isotope effects on hexagonal boron nitride properties

Prediction of Phonon Properties of Cubic Boron Nitride with Vacancy Defects and Isotopic Disorders by Using a Neural Network Potential

Electron-phonon Scattering and Stacking Sequences in Hexagonal Boron Nitride: an Ab Initio Study

Observation of the nonanalytic behavior of optical phonons in monolayer hexagonal boron nitride

Enhanced Light-Matter Interaction in B-10 Monoisotopic Boron Nitride Infrared Nanoresonators

Temperature dependent spin-phonon coupling of boron-vacancy centers in hexagonal boron nitride

Tunable Phonon Polariton Hybridization in a van der Waals Hetero‐Bicrystal

Anomalous isotope effect on mechanical properties of single atomic layer Boron Nitride