Phase Diagram and Flux Pinning in Bi-doping BaPbO3 Compounds

Z. F. Wu,K. Wang,S. G. Yang,Z. H. Wang

DOI: https://doi.org/10.1016/j.jallcom.2018.03.328

IF: 6.2

2018-01-01

Journal of Alloys and Compounds

Abstract:BaPb1-xBixO3-delta with x = 0.1-0.3 were prepared by a solid-state reaction method. X-ray diffraction patterns show that the cell parameters increase with the increasing x. From the result of transport measurement, we have drawn a BaPb1-xBixO3-delta phase diagram, which is divided into three regions: metal, semiconducting and superconducting. In the superconducting region, the doping x dependence of critical temperature can be fitted well by a parabolic equation, 1-T-c/T-c(max) = A(x-x(c))(2) with A = 120.68 and x(c) = 0.223. Compared with the phase diagram of high-T-c cuprates, we think that x>0.223 should be underdoped region and x<0.223 is overdoped region. The field dependence of critical temperature for all samples displays a power law, H-c = H-c(0) (1-T/T-c)(n) and the n-value depends on the doping level. The effective pinning energy is enhanced by Bi-doping. In low field, a possible strong collective flux pinning of 2D defects may be produced by stripe-like nanoscale structure and/or Bi3+ and Bi5+ ions induced dislocations. Above crossover field, a weak pinning of linear-like defects and/or point defects dominated in higher field. The magnetization measurement confirms the flux pinning mechanism. (C) 2018 Elsevier B.V. All rights reserved.