Abstract:As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this work are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and band structure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. The computer based simulations carried out are essentially based on DFT using NEGF formalism. A silicon nanowire has been modeled as PN diode (Zener Diode), PIN diode, PIP & NIN diode configurations by selectively doping the nanowire and simulated by biasing one end of the nanowire to ground and sweeping the other end of the nanowire from -1 V to 1 V to obtain the electrical characteristics of the respective diodes. In order to determine the effectiveness of the modeled diodes in silicon nanowire, the same diodes have been modeled using a germanium nanowire by selective doping and simulated in the same manner to obtain the electrical characteristics of the germanium nanowire based diodes which has been used as a reference to analyze the characteristics obtained using silicon nanowire. The modeled diodes are extremely small in dimension when compared to the conventional bulk silicon and germanium based diodes. This work is followed by modeling and simulation of a gate all around nanowire field effect transistor using two different gate dielectrics, followed by temperature dependence of the nanowire FET characteristics and the off state current and conductance variation using the two dielectrics.

A Superconducting Nanowire Can Be Modeled by Using SPICE

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

A Distributed Electrical Model for Superconducting Nanowire Single Photon Detectors

Microfiber Coupled Superconducting Nanowire Single-Photon Detectors

Optical Modeling of Superconducting Nanowire Single Photon Detectors Using the Transfer Matrix Method

Numerical simulation of an electro-thermal model for superconducting nanowire single-photon detectors

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Numerical modeling of SNSPD absorption utilizing optical conductivity with quantum corrections

Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors

Device modeling of superconductor transition edge sensors based on the two-fluid theory

A Compact Model for Nanowire Tunneling-FETs

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Design of NbN superconducting nanowire single photon detectors with enhanced infrared photon detection efficiency

Design of a Micrometer-Long Superconducting Nanowire Perfect Absorber for Efficient High-Speed Single-Photon Detection

A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Waveguide-integrated superconducting nanowire single-photon detectors

Modelling response time contrasts in superconducting nanowire single photon detectors

Operation of a superconducting nanowire in two detection modes: KID and SPD

An encodable superconducting nanowire trigger