Abstract:This paper reports an alloying strategy to prepare single crystals of InSe1−xSx and InSe1−yTey with continuously tunable bandgaps. The ternary alloys are fabricated into field‐effect transistors, exhibiting competitive electronic and optoelectronic performance. This work provides additional degree of freedom for tuning the optical and electrical properties of InSe, and illustrates their potential applications in high‐performance electronic and optoelectronic devices.Alloying offers an efficient strategy to tune the bandgap of two‐dimensional (2D) layered materials, enabling them to tailor the optical and electronic attributes without compromising the structural integrity. Here the authors report the synthesis of a series of ternary InSe1−xSx and InSe1−yTey alloys possessing ε‐polymorph and single crystalline structure. Both the photoluminescence and Raman spectra of multilayer InSe1−xSx and InSe1−yTey demonstrate that an effective modulation of bandgap and concomitant optical properties is achieved by tuning the alloy compositions, consistent with density functional theory calculations. Field‐effect transistors fabricated from the multilayer alloys on SiO2 dielectric substrates display electron field‐effect mobilities of up to ≈127 cm2 V−1 s−1. All the multilayer alloy devices show a high current on/off ratio of ≈108. When fabricated into photodetectors, multilayer InSe0.9S0.1 and InSe0.9Te0.1 exhibit maximum photoresponsivities of 5.4 × 105 and 7.7 × 104 A W−1, respectively. Moreover, the InSe1−yTey alloys are able to expand the photoresponse range into 1250 nm due to the bandgap narrowing upon Te alloying. This work sheds light on rationally designing 2D layered InSe with tunable bandgaps via alloying, and demonstrates their promising applications in electronics and optoelectronics.

Bandgap Engineering of InSe Single Crystals Through S Substitution

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Bandgap Engineering of Ternary ε‐InSe 1− x S x and ε‐InSe 1− y Te y Single Crystals for High‐Performance Electronics and Optoelectronics

Bandgap Engineering of Ternary Ε‐inse1−xsx and Ε‐inse1−ytey Single Crystals for High‐Performance Electronics and Optoelectronics

First-principle studies of monolayer and bulk InSe1_xSx

Tuning the band gap of the InSe monolayer by substitutional doping

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Tunable Electronic Properties of an Sb/InSe Van Der Waals Heterostructure by Electric Field Effects

Composition‐tunable SnSe(1−x)Sx (0 ≤ x ≤ 1) single crystals toward efficient bandgap engineering and optical/thermal properties

Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering

Ultrasensitive Tunability of the Direct Bandgap of 2D InSe Flakes Via Strain Engineering

Strain-regulated electronic and optical properties of InSe/WS 2 heterostructure from first-principle calculations

Atomic Insights into the Influence of Bi Doping on the Optical Properties of Two-Dimensional Van Der Waals Layered InSe.

Effects of S-doping on the Electronic Transition, Band Gap, and Optical Absorption of GaSe1−xSx Single Crystals

Strain-regulated electronic and optical properties of InSe/WS<sub>2</sub> heterostructure from first-principle calculations

Bandgap Engineering of InSb by N Incorporation by Metal-Organic Chemical Vapor Deposition

Novel SnSxSe1-x nanocrystals with tunable band gap: Experimental and first-principles calculations

Doping-Induced Unusual Band Gap Enlargement in Group V Elements Doped 2D Ferroelectricα-In2Se3

Super Deformability and Thermoelectricity of Bulk Γ-Inse Single Crystals

Experimental and theoretical investigations on the defect and optical properties of S- and Al-doped GaSe crystals

Alloy engineered germanium monochalcogenide with tunable bandgap for broadband optoelectrical applications