Abstract:Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated to exhibit electromechanical coupling effects, which makes them promising candidates for next-generation devices, such as piezotronics and nanogenerators. Recently, flexoelectricity was found to account for the out-of-plane electromechanical coupling in many 2D transition metal dichalcogenides (TMDs) who only exhibit in-plane piezoelectricity. However, low dimensional vdW three-dimensional (3D) topological insulators (TIs) have been overlooked regarding their electromechanical properties. In this study, for the first time, we experimentally investigate the electromechanical coupling of low dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenite (Bi2Se3), is taken as an example. The results of piezoresponse force microscope (PFM) tests on the Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. The Bi2Se3 nanoflake with a thickness of 37 nm possesses an effective out-of-plane piezoelectric coefficient of ~0.65 pm V-1. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by flexoelectric coefficient, {\mu}_39, which is estimated to be approximately 0.13 nC m-1. However, it is rather difficult to obtain the in-plane component of the flexoelectric tensor from the in-plane PFM measurements since the direction of the in-plane stress is always not normal to the AFM cantilever axis. The results provide useful guidance for understanding the flexoelectric effect of low dimensional vdW materials with centrosymmetric crystal structures. Moreover, the work can pave to way to explore the electromechanical devices based on the flexoelectricity of vdW TIs.

Tight-binding Piezoelectric Theory and Electromechanical Coupling Correlations for Transition Metal Dichalcogenide Monolayers

Out-of-plane electromechanical coupling in transition metal dichalcogenides

Mechanical Elasticity and Piezoelectricity in Monolayer Transition-Metal Dichalcogenide Alloys

Tuning Band Gaps in Twisted Bilayer MoS_2

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

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Giant Piezoelectricity in Antiferromagnetic CrS2 and CrSe2 Monolayers

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

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Giant Piezoelectricity in Antiferromagnetic CrS₂ and CrSe₂ Monolayers

Dynamical piezomagnetic effect in time-reversal-invariant Weyl semimetals with axionic charge density waves

Piezoelectricity in two-dimensional materials: a comparative study between lattice dynamics and ab-initio calculations

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Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Converse Flexoelectricity of Low-Dimensional Bismuth Selenite (Bi2Se3) Revealed by Piezoresponse Force Microscopy (PFM)

Density functional studies on wurtzite piezotronic transistors: influence of different semiconductors and metals on piezoelectric charge distribution and Schottky barrier.