Abstract:Advanced electronic device technologies require a faster operation and smaller average power consumption, which are the most important parameters in very large scale integrated circuit design. The conventional Complementary Metal-Oxide Semiconductor (CMOS) technology is limited by the threshold voltage and subthreshold leakage problems in scaling of devices. This leads to failure in adapting it to sub-micron and nanotechnologies. The carbon nanotube (CNT) technology overcomes the threshold voltage and subthreshold leakage problems despite reduction in size. The CNT based technology develops the most promising devices among emerging technologies because it has most of the desired features. Carbon Nanotube Field Effect Transistors (CNFETs) are the novel devices that are expected to sustain the transistor scalability while increasing its performance. Recently, there have been tremendous advances in CNT technology for nanoelectronics applications. CNFETs avoid most of the fundamental limitations and offer several advantages compared to silicon-based technology. Though CNT evolves as a better option to overcome some of the bulk CMOS problems, the CNT itself still immersed with setbacks. The fabrication of carbon nanotube at very large digital circuits on a single substrate is difficult to achieve. Therefore, a hybrid NP dynamic Carry Look Ahead Adder (CLA) is designed using p-CNFET and n-MOS transistors. Here, the performance of CLA is evaluated in 8-bit, 16-bit, 32-bit and 64-bit stages with the following four different implementations: silicon MOSFET (Si-MOSFET) domino logic, Si-MOSFET NP dynamic CMOS, carbon nanotube MOSFET (CN-MOSFET) domino logic, and CN-MOSFET NP dynamic CMOS. Finally, a Hybrid CMOS-CNFET based 64-bit NP dynamic CLA is evaluated based on HSPICE simulation in 32nm technology, which effectively suppresses power dissipation without an increase in propagation delay.

A Novel Implementation of 4-Bit Carry Look-Ahead Adder

A New Carry Look-Ahead Adder Architecture Optimized for Speed and Energy

4-bit Carry Look Ahead Adder Using MGDI Technique

Asynchronous Early Output Section-Carry Based Carry Lookahead Adder with Alias Carry Logic

4-Bit High-Speed Binary Ling Adder

Design of Synchronous Section-Carry Based Carry Lookahead Adders with Improved Figure of Merit

Asynchronous Early Output Block Carry Lookahead Adder with Improved Quality of Results

Speed and Energy Optimised Quasi-Delay-Insensitive Block Carry Lookahead Adder

A High-Speed Carry-Select Adder with Optimized Block Sizes

Hybrid CMOS-CNFET based NP dynamic Carry Look Ahead Adder

Design and Implementation of an Improved Carry Increment Adder

Design of High-Speed Area-Efficient VLSI Architecture of 32-Bit Three-Operand Binary Adder

A 16-nm FinFET 28.8-mW 800-MHz 8-Bit All-N-Transistor Logic Carry Look-Ahead Adder

Pipelined Carry Look-Ahead Adder

Design of low power CMOS ternary 4-input full adder and its application

Optimized Carry Lookahead Adders with Direct Feeding

An Improvement on Carry Chain of Conditional Carry Selection

A Logarithmic Depth Quantum Carry-Lookahead Modulo $(2^n-1)$ Adder

A 64-Bit Lookahead Carry Chain in Inverted-Domino Logic

A New Implementation of 16-bit Parallel Prefix Adder for High Speed and Low Area.

Design of Adder Based on Abacus Algorithm