Double Refraction And Spin Splitter In Normal-Conductor/Hexagonal-Semiconductor Junctions

Peng Lv,Ning Dai,Qing-feng Sun
DOI: https://doi.org/10.1103/PhysRevB.97.235425
IF: 3.7
2018-01-01
Physical Review B
Abstract:In analogy with light refraction at optical boundary, ballistic electrons also undergo refractionwhen propagating across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but the realization of negative refraction in an electronic system is conceptually straightforward, which has been verified in graphene p-n junctions in recent experiments. Here, we propose a model to realize double refraction and double focusing of electric current by a normal-conductor/hexagonal-semiconductor junction. The double refraction can be either positive or negative, depending on the junction being n-n type or p-n type. Based on the valley-dependent negative refraction, a spin splitter (valley splitter) is designed at the p-n junction system, where the spin-up and spin-down electrons are focused in different regions. These findings may be useful for the engineering of double lenses in electronic systems and have an underlying application of spin splitter in spintronics.
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