Generalized Modeling of the Fractional-Order Memcapacitor and Its Character Analysis

Zhang Guo,Gangquan Si,Lijie Diao,Lixin Jia,Yanbin Zhang

DOI: https://doi.org/10.1016/j.cnsns.2017.11.007

IF: 4.186

2018-01-01

Communications in Nonlinear Science and Numerical Simulation

Abstract:Memcapacitor is a new type of memory device generalized from the memristor. This paper proposes a generalized fractional-order memcapacitor model by introducing the fractional calculus into the model. The generalized formulas are studied and the two fractional-order parameter alpha, beta are introduced where or mostly affects the fractional calculus value of charge q within the generalized Ohm's law and beta generalizes the state equation which simulates the physical mechanism of a memcapacitor into the fractional sense. This model will be reduced to the conventional memcapacitor as alpha = 1, eta = 0 and to the conventional memristor as alpha = 0, beta = 1. Then the numerical analysis of the fractional-order memcapacitor is studied. And the characteristics and output behaviors of the fractional-order memcapacitor applied with sinusoidal charge are derived. The analysis results have shown that there are four basic nu - q and nu - i curve patterns when the fractional order alpha, beta respectively equal to 0 or 1, moreover all nu - q and nu - i curves of the other fractional-order models are transition curves between the four basic patterns. (c) 2017 Elsevier B.V. All rights reserved.