Revealing Anisotropy and Thickness Dependence of Raman Spectra for SnS Flakes

Mingling Li,Yiming Wu,Taishen Li,Yulin Chen,Huaiyi Ding,Yue Lin,Nan Pan,Xiaoping Wang

DOI: https://doi.org/10.1039/c7ra09430b

IF: 4.036

2017-01-01

RSC Advances

Abstract:The anisotropic Raman behavior of SnS flake is found to be strongly dependent on the thickness of flake.

What problem does this paper attempt to address?

Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy

Xiangnan Gong,Ting Yan,Jue Li,Jie Liu,Hanjun Zou,Bin Zhang,Hong Wu,Zizhen Zhou,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/d2ra06470g

IF: 4.036

2022-11-10

RSC Advances

Abstract:Tin sulfide (SnS), a IV–VI group layered compound, has attracted much attention because of its excellent thermoelectric properties along the crystallographic b -axis. However, there are few reports on the identification of its in-plane orientation. We observe a strong anisotropy of the in-plane Raman signal in bulk SnS. With the help of ab initio calculations, the vibrational symmetry of each observed Raman mode in the cleaved (00 l )-plane is consistent with the experimental values. The angle-resolved polarized Raman spectroscopy, combined with electron backscattered diffraction technology, is utilized to systematically investigate the in-plane anisotropy of the phonon response and then determine the in-plane orientation. Furthermore, the temperature-dependent and laser-power-dependent Raman scattering analyses reveal that the adjacent layers in the SnS crystals show a relatively weak van der Waals interaction. These findings could provide much-needed experimental information for future applications related to the anisotropic transport properties of SnS single crystals.

chemistry, multidisciplinary
Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Wen Wen,Yiming Zhu,Xuelu Liu,Hung-Pin Hsu,Zhen Fei,Yanfeng Chen,Xinsheng Wang,Mei Zhang,Kuan-Hung Lin,Fei-Sheng Huang,Yi-Ping Wang,Ying-Sheng Huang,Ching-Hwa Ho,Ping-Heng Tan,Chuanhong Jin,Liming Xie

DOI: https://doi.org/10.1002/smll.201603788

IF: 13.3

2017-01-01

Small

Abstract:2D black phosphorus (BP) and rhenium dichalcogenides (ReX2, X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX2 has low-symmetry distorted 1T structures with excellent stability. In ReX2, the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS2 and ReSe2. Photoluminescence emission energy of ReS2(1-x)Se2x monolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS2-like peak at 212 cm(-1), shifts as the composition changes. Anisotropic electrical property is maintained in ReS2(1-x)Se2x with high electron mobility along b-axis for all compositions of ReS2(1-x)Se2x.
Asymmetry of Raman Scattering by Structure Variation in Space.

Ridong Wang,Pengyu Yuan,Meng Han,Shen Xu,Tianyu Wang,Xinwei Wang

DOI: https://doi.org/10.1364/oe.25.018378

IF: 3.8

2017-01-01

Optics Express

Abstract:We report on the discovery of asymmetries of Raman scattering along one scanning direction, between two scanning directions, and by structure variation of the sample in space. Asymmetry of Raman shift along the x direction, and the asymmetry of Raman shift and linewidth between the two scanning directions (x and y) are found for a 1210 nm diameter silica particle. The observed asymmetries are confirmed by further 2D Raman scanning of the same particle. To further explore the asymmetry of Raman scattering, glass fibers of three diameters (0.53, 1.00, and 3.20 μm) are scanned along two directions. The asymmetry of Raman shift along each direction, the asymmetry of linewidth along the y direction, and the asymmetry of Raman shift and linewidth between the two scanning directions are discovered. Additionally, 11 nm-thick MoSe2 nanosheets on silicon are used to discover whether an asymmetry of Raman scattering exists at the edge of the nanosheets. One edge of the nanosheet is scanned in four directions and the asymmetry of Raman scattering caused by the step variation is also detected. All the observed Raman scattering asymmetries are explained soundly by the Raman signal diffraction and image shift on the CCD detector arrays of the Raman spectrometer. In practice, to use scanning Raman for surface structure study, great measure has to be taken to consider the structure-induced asymmetries to uncover the real Raman wave number variation by intrinsic material structure. We propose a signal processing method by averaging the scanning points along four directions to eliminate the interference of the edge. This method works well to significantly suppress the asymmetries of Raman properties and uncover the real Raman signal change by structure variation.
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Xiaolong Xu,Qingjun Song,Haifeng Wang,Pan Li,Kun Zhang,Yilun Wang,Kai Yuan,Zichen Yang,Yu Ye,Lun Dai

DOI: https://doi.org/10.48550/arXiv.1701.00310

2017-01-02

Abstract:The group IV-VI compound SnSe, with an orthorhombic lattice structure, has recently attracted particular interest due to its unexpectedly low thermal conductivity and high power factor, showing great promise for thermoelectric applications. SnSe displays intriguing anisotropic properties due to the puckered low-symmetry in-plane lattice structure. Low-dimensional materials have potential advantages in improving the efficiency of thermoelectric conversion, due to the increased power factor and decreased thermal conductivity. A complete study of the optical and electrical anisotropies of SnSe nanostructures is a necessary prerequisite in taking advantage of the material properties for high performance devices. Here, we synthesize the single crystal SnSe nanoplates (NPs) by chemical vapor deposition. The angular dependence of the polarized Raman spectra of SnSe NPs shows anomalous anisotropic light-mater interaction. The angle-resolved charge transport of the SnSe NPs expresses a strong anisotropic conductivity behavior. These studies elucidate the anisotropic interactions which will be of use for future ultrathin SnSe in electronic, thermoelectric and optoelectronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Raman Scattering, Far Infrared Spectrum and Photoluminescence of SnS2 Nanocrystallites

CR Wang,KB Tang,Q Yang,YT Qian

DOI: https://doi.org/10.1016/s0009-2614(02)00495-5

IF: 2.719

2002-01-01

Chemical Physics Letters

Abstract:The optical property of SnS2 nanocrystallites has been investigated by Raman scattering, far infrared spectrum and photoluminescence at room temperature. The Raman and far infrared spectrum of the SnS2 nanocrystallites have a shift in comparison with that of the SnS2 single crystals. The shift is mainly attributed to nanosize effect. The intralayer and interlayer force constant of SnS2 nanocrystallites have been calculated by using a linear chain model. The photoluminescence of SnS2 nanocrystallites is reported for the first time.
Investigation of Temperature-Dependent Phonon Anharmonicity and Thermal Transport in SnS Single Crystals

Jue Li,Ting Yan,Xiangnan Gong,Hanjun Zou,Bin Zhang,Hong Wu,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1021/acs.jpclett.3c01600

2023-08-12

Abstract:Tin sulfide has outstanding thermoelectric properties in the b-axis direction of crystallography as a IV-VI group layered compound, which arouses great attention. In this study, temperature-dependent Raman spectroscopy (TDRS) is used to quantify the phonon anharmonicity in SnS crystals from 77 to 475 K, where the three-phonon process dominates in this temperature region. Moreover, integration of the four-phonon process and lattice thermal expansion will better describe the temperature-dependent...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Morphology-Dependent Low-Frequency Raman Scattering in Ultrathin Spherical, Cubic, and Cuboid Sno2 Nanocrystals

L. Z. Liu,X. L. Wu,T. H. Li,S. J. Xiong,H. T. Chen,Paul K. Chu

DOI: https://doi.org/10.1063/1.3670337

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Nanoscale spherical, cubic, and cuboid SnO2 nanocrystals (NCs) are used to investigate morphology-dependent low-frequency Raman scattering. A double-peak structure in which the linewidths and energy separation between two subpeaks decrease with increasing sizes of cuboid NCs is observed and attributed to the surface acoustic phonon modes confined in three dimensional directions and determined by the surface/interface compositions. The decrease in energy separation is due to weaker coupling between the acoustic modes in different vibration directions. Our experimental and theoretical studies clearly disclose the morphology-dependent surface vibrational behavior in self-assembled NCs.
Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2

H. Sahin,S. Tongay,S. Horzum,W. Fan,J. Zhou,J. Li,J. Wu,F. M. Peeters

DOI: https://doi.org/10.48550/arXiv.1303.5861

2013-03-23

Materials Science

Abstract:Typical Raman spectra of transition metal dichalcogenides (TMDs) display two prominent peaks, E2g and A1g, that are well separated from each other. We find that these modes are degenerate in bulk WSe2 yielding one single Raman peak. As the dimensionality is lowered, the observed peak splits in two as a result of broken degeneracy. In contrast to our experimental findings, our phonon dispersion calculations reveal that these modes remain degenerate independent of the number of layers. Interestingly, for minuscule biaxial strain the degeneracy is preserved but once the crystal symmetry is broken by uniaxial strain, the degeneracy is lifted. Our calculated phonon dispersion for uniaxially strained WSe2 shows a perfect match to the measured Raman spectrum which suggests that uniaxial strain exists in WSe2 flakes possibly induced during the sample preparation and/or as a result of interaction between WSe2 and the substrate. Furthermore, we find that WSe2 undergoes an indirect to direct bandgap transition from bulk to monolayers which is ubiquitous for semiconducting TMDs. These results not only allow us to understand the vibrational properties of WSe2 but also provides detailed insight to their physical properties.
Study of the Raman-Spectrum of Nanometer Sno2

J ZUO,CY XU,XM LIU,CS WANG,CY WANG,Y HU,YT QIAN

DOI: https://doi.org/10.1063/1.356348

IF: 2.877

1994-01-01

Journal of Applied Physics

Abstract:The Raman spectra of nanometer-sized particles of SnO2 (3–90 nm) at room temperature are reported. In the Raman spectra of the particles of SnO2, which are quite different from that of single-crystal SnO2, there appear two new characteristic peaks, and their intensities decrease gradually with the increase of crystal size. It is concluded that the new peaks can be explained by the surface phonon modes of nanometer SnO2, consequently there is a relation between the structures of surface layers and bulk. It is believed that it is possible to determine the exact positions of atoms in surface layers of some nanometer crystals from their laser Raman spectra.
Spotting the Differences in Two-Dimensional Materials - the Raman Scattering Perspective.

Shishu Zhang,Na Zhang,Yan Zhao,Ting Cheng,Xiaobo Li,Rui Feng,Hua Xu,Zhirong Liu,Jin Zhang,Lianming Tong

DOI: https://doi.org/10.1039/c7cs00874k

IF: 46.2

2018-01-01

Chemical Society Reviews

Abstract:Two-dimensional (2D) layered materials have attracted tremendous attention and led to a prosperous development in both fundamental investigation and device applications in various fields, such as nanoelectronics, flexible devices, sustainable energy and catalysts. The precise characterization of the structure and properties of 2D materials is in urgent need. Raman scattering spectroscopy is one of the most popular characterization tools that is convenient, rapid and non-invasive. It provides information on both the lattice structure from the frequency of phonon modes and the electronic band structure through the intensity due to electronic resonance Raman scattering. Although a few morphological characterization tools can image 2D materials with atomic resolution, Raman scattering measurements are more tolerant to the conditions of sample preparation such as the substrate and less technically demanding, and have been one of the routine tools for the characterization of 2D materials. In this review, we focus on the characterization of 2D materials using Raman scattering spectroscopy, in particular, the revealing of differences from primitive 2D materials, such as defects, doping effects, van der Waals heterostructures and the interaction with molecules. The characteristic Raman features of such differences and the corresponding interpretation will be discussed. We hope that this review will be useful for wide research communities of materials, physics, chemistry and engineering.
Tunable anisotropy in ReS 2 flakes achieved by Ar + ion bombardment probed by polarized Raman spectroscopy

Jing Yu,Yingying Wang,Jie Jiang,Yao Liang,Yinjie Liu,Bo Zhong,Sufeng Quan,Mengfan Zhou,Zhenhua Ni,Shuai Guo

DOI: https://doi.org/10.1063/5.0053903

IF: 4

2021-08-02

Applied Physics Letters

Abstract:Crystal-orientation-dependent properties in low symmetric two-dimensional material ReS2 have inspired its novel applications in photonics, electronics, and optoelectronics. In this work, Ar+ ion bombardment is used to treat ReS2 with different thicknesses, and different amounts of defect densities are introduced in ReS2 flakes. Angular dependent polarized Raman spectra is used to probe the change in anisotropy. The intensities of mode V exhibit maximum and minimum intensities with incident polarization along the b-axis and perpendicular. The intensity ratio Imin/Imax is used as a quantity to detect the change in anisotropy. It is found that with the same defect density, the change in anisotropy in 1-layer (L) ReS2 is the highest among ReS2 flakes; thus, 1L ReS2 is susceptible to ion bombardment. With an increase in the defect density in 1L ReS2, an increase in the Imin/Imax value is observed. A phenomenological model is established to understand the quantitative relationship between defect density and anisotropy, and the isotropic scattering range associated with defects is obtained. The results here provide ways of quantitatively understanding anisotropy by angular polarized Raman spectroscopy as well as ways of tuning anisotropy in two-dimensional anisotropic materials by ion bombardments.

physics, applied
Raman Spectroscopy Application in Anisotropic 2D Materials (Adv. Electron. Mater. 2/2024)

Xun Zhao,Zhipu Li,Shiru Wu,Min Lu,Xiaoji Xie,Da Zhan,Jiaxu Yan

DOI: https://doi.org/10.1002/aelm.202470008

IF: 6.2

2024-02-11

Advanced Electronic Materials

Abstract:Anisotropic 2D Materials As a practical, quick, and nondestructive characterization tool, Raman spectroscopy plays a crucial role in studying 2D anisotropic materials (black phosphorus, ReS2, WTe2, etc.). It enables lattice orientation identification, investigation of structural phase transitions, and examination of anisotropic lattice vibrations, among other aspects. In article number 2300610, Min Lu, Jiaxu Yan, and co‐workers provide a comprehensive review of recent developments in Raman spectroscopy research on 2D anisotropic materials, including various instrumentation and characterization of each material.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Anisotropic Raman spectrum and transport properties of AuTe2Br flakes.

Shimin Cao,Wenlong Ma,Gan Zhai,Zhijian Xie,Xueshi Gao,Yan Zhao,Xiumei Ma,Lianming Tong,Shuang Jia,Jian-Hao Chen

DOI: https://doi.org/10.1088/1361-648X/ab5cb4

2020-01-01

Abstract:Topological semimetal (TSM) AuTe2Br thin flakes have been studied by Raman spectroscopy and magneto-transport measurement. The angle-resolved polarized Raman spectrum of AuTe2Br (bulk and thin flake) shows strong anisotropy. Together with high resolution transmission electron microscopy (TEM), we establish a non-destructive method to determine the crystallographic orientation of AuTe2Br flakes. At high temperature (T > 50 K), the magneto-resistance (MR) of AuTe2Br thin flakes shows typical parabolic-like behavior, which can be well fitted by the two-fluid model. However, at low temperature (T <= 30 K), the MR of thin flakes (<17 nm) clearly deviates from the two-fluid model as well as from the Kohler's rule, suggesting a new type of scattering emerging below 30 K. Several possible scattering mechanisms are discussed and the respective corrections to MR are compared with our experimental data. In addition, the conductivity of these metallic crystals is also found to be highly anisotropic, with the hole mobility along the a axis about five times higher than that along the c axis.
Raman Scattering Study of Two-Dimensional Magnetic Van Der Waals Compound VI 3

Yi-Meng Wang,Shang-Jie Tian,Cheng-He Li,Feng Jin,Jian-Ting Ji,He-Chang Lei,Qing-Ming Zhang

DOI: https://doi.org/10.1088/1674-1056/ab8215

2020-01-01

Abstract:The layered magnetic van der Waals materials have generated tremendous interest due to their potential applications and importance in fundamental research. Previous x-ray diffraction (XRD) studies on the magnetic van der Waals compound VI3, revealed a structural transition above the magnetic transition but output controversial analysis on symmetry. In this paper we carried out polarized Raman scattering measurements on VI3 from 10 K to 300 K, with focus on the two A g phonon modes at ∼ 71.1 cm−1 and 128.4 cm−1. Our careful symmetry analysis based on the angle-dependent spectra demonstrates that the crystal symmetry can be well described by C 2h rather than D 3d both above and below structural phase transition. We further performed temperature-dependent Raman experiments to study the magnetism in VI3. Fano asymmetry and anomalous linewidth drop of two A g phonon modes at low temperatures, point to a significant spin–phonon coupling. This is also supported by the softening of 71.1-cm−1 mode above the magnetic transition. The study provides the fundamental information on lattice dynamics and clarifies the symmetry in VI3. And spin–phonon coupling existing in a wide temperature range revealed here may be meaningful in applications.
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Song-Lin Li,Hisao Miyazaki,Haisheng Song,Hiromi Kuramochi,Shu Nakaharai,Kazuhito Tsukagoshi

DOI: https://doi.org/10.1021/nn3025173

2013-08-18

Abstract:We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

Mesoscale and Nanoscale Physics,Materials Science
Identifying, Resolving, and Quantifying Anisotropy in ReS2 Nanomechanical Resonators

Bo Xu,Jiankai Zhu,Fei Xiao,Chenyin Jiao,Yachun Liang,Ting Wen,Song Wu,Zejuan Zhang,Lin Lin,Shenghai Pei,Hao Jia,Ying Chen,Ziming Ren,Xueyong Wei,Wen Huang,Juan Xia,Zenghui Wang

DOI: https://doi.org/10.1002/smll.202300631

IF: 13.3

2023-03-12

Small

Abstract:Dynamic response in ReS2 nanomechanical resonators is leveraged to unambiguously resolve the mechanical anisotropy in 2D ReS2 crystal. Using resonant nanomechanical spectromicroscopy, the in‐plane Young's moduli of 2D ReS2 are found to be 127 and 201 GPa along the two orthogonal mechanical axes, with the mechanical soft axis aligns with the Re‐Re chain in the ReS2 crystal. As an emerging two‐dimensional semiconductor, rhenium disulfide (ReS2) is renowned for its strong in‐plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS2, experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS2 nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS2 resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS2 crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in‐plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re‐Re chain in the ReS2 crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2

Xin Luo,Yanyuan Zhao,Jun Zhang,Minglin Toh,Christian Kloc,Qihua Xiong,Su Ying Quek

DOI: https://doi.org/10.48550/arXiv.1401.0626

2014-01-03

Abstract:We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse is not always true due to the reduced symmetry in thin films. Here, we predict from group theory and density functional calculations that two intra-layer vibrational modes which are Raman inactive in bulk WSe2 in our experimental configuration become Raman active in thin film WSe2, due to reduced symmetry in thin films. This phenomenon explains the Raman peaks we observe experimentally at ~310 cm-1 and 176 cm-1 in thin film WSe2. Interestingly, the bulk mode at ~310 cm-1 that is Raman inactive can in fact be detected in Raman measurements under specific wavelengths of irradiation, suggesting that in this case, crystal symmetry selection rules may be broken due to resonant scattering. Both theory and experiment indicate that the and modes blue-shift with decreasing thickness, which we attribute to surface effects. Our results shed light on a general understanding of the Raman/IR activities of the phonon modes in layered transition metal dichalcogenide materials and their evolution behavior from 3D to 2D.

Materials Science
Atomically Asymmetric Inversion Scales up to Mesoscopic Single-Crystal Monolayer Flakes

Rui Xu,Fei Pang,Yuhao Pan,Yingzhuo Lun,Lan Meng,Zhiyue Zheng,Kunqi Xu,Le Lei,Sabir Hussain,Yan Jun Li,Yasuhiro Sugawara,Jiawang Hong,Wei Ji,Zhihai Cheng

DOI: https://doi.org/10.1021/acsnano.0c06198

IF: 17.1

2020-09-01

ACS Nano

Abstract:Symmetry is highly relevant with various quantities and phenomena in physics. While the translational symmetry breaks at the edges of two-dimensional hexagonal crystalline flakes, it is usually associated with the breaking of central inversion symmetry that is yet to be observed in terms of physical properties. Here, we report an experiment–theory joint study on in-plane compressed single-crystal monolayer WS2 flakes. Although the flakes show a hexagonal appearance with a C6 symmetry, our density functional theory calculations predict that their in-plane strain, geometric structure, work-function, energy bandgap, and mechanical modulus are nonequivalent among the triangular regions with different edge terminations at the atomic scale, and the flakes exhibit self-patterns with a C3 symmetry. Such nonequivalence of physical properties and concomitant self-patterns persist even in a 50 μm-sized monolayer WS2, observed using atomic force microscopy. This indicates that the symmetry arising from the atomic geometry could preserve up to tens of microns for both geometric and properties of the flake, regardless of its mesoscopic geometry, i.e., C6 here. Such a detectable mesoscopic scale and symmetric nano- to mesoscale patterns provide promising building blocks for 2D materials and devices and also allow edge terminations of 2D flakes to be directly distinguished.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c06198?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c06198</a>.Additional details of the characterization technique, method and parameters of the DFT-based and FEA-based calculations, and additional figures as described in the text (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c06198/suppl_file/nn0c06198_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Strong Anharmonicity in Tin Monosulfide Evidenced by Local Distortion, High-Energy Optical Phonons, and Anharmonic Potential

Peng Wu,Kang Xia,Kunling Peng,Takashi Honda,Kazutaka Ikeda,Fengguang Liu,Pierre Vallobra,Fengren Fan,Jiuhui Song,Deming Zhang,Fanghang Yu,Jianjun Ying,Fengfeng Zhu,Toshiya Otomo,Takashi Kamiyama,Weisheng Zhao

DOI: https://doi.org/10.1103/physrevb.103.195204

2021-01-01

Abstract:Recently, SnSe has been found to possess a remarkable thermoelectric performance. As an isostructural compound to SnSe, SnS contains a more environmentally compatible and earth abundant element, which enables SnS a promising thermoelectric material for commercial application. In this work, we have performed systematic studies of the crystal structures and the lattice vibrations by means of neutron total scattering, Raman scattering measurements, and first-principle calculations. A structural transition has been observed by both temperature dependent neutron diffraction and pressure dependent Raman scattering. The lattice anharmonicity has been revealed by the local distortion induced by the Sn 5s(2) lone pair and is also evidenced from the temperature dependent atomic displacement parameter of the Sn atom. By separating the intrinsic anharmonicity and lattice thermal expansion effects, we found that the former plays the primary role in the softening of the Raman active modes. Such anharmonicity has also been observed experimentally by the linewidth broadening of the high-energy optical modes and confirmed by frozen phonon calculations. Furthermore, our frozen phonon calculation reveals the presence of the quartic anharmonicity potential of those high-energy optical modes vibrating along the b axis. Our data will contribute to a better understanding of the thermal conduction in SnS, which will be beneficial for the enhancement of the thermoelectric performance of this material.
Large Single Crystal Sns2 Flakes Synthesized from Coevaporation of Sn and S

Y. -B. Yang,J. K. Dash,A. J. Littlejohn,Y. Xiang,Y. Wang,J. Shi,L. H. Zhang,K. Kisslinger,T. -M. Lu,G. -C. Wang

DOI: https://doi.org/10.1021/acs.cgd.5b01512

IF: 4.01

2016-01-01

Crystal Growth & Design

Abstract:Remarkable properties of layered metal dichalcogenides and their potential applications in various fields have raised intense interest worldwide. We report tens of microns-sized ultrathin single crystal SnS2 flakes grown on amorphous substrates using a simple one-step thermal coevaporation process. X-ray pole figure analysis reveals that a majority of flakes are oriented with the (0001) plane parallel to the substrate and a preferred fiber texture. For few-layer-thick SnS2, Moire patterns of 6-fold and 12-fold symmetries are observed by transmission electron microscopy imaging and diffraction. These patterns result from the relative rotation between SnS2 layers in the ultrathin flake. The 12-fold symmetry is,consistent with a known quasicrystal pattern. The photoluminescence spectrum supports that these ultrathin flakes possess a direct bandgap. Carrier lifetime measured by time-resolved photoluminescence of a single flake is a few nanoseconds. These results improve our understanding of the formation and shape of ultrathin SnS2 flakes.

Revealing Anisotropy and Thickness Dependence of Raman Spectra for SnS Flakes

Revealing the anisotropic phonon behaviours of layered SnS by angle/temperature-dependent Raman spectroscopy

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Asymmetry of Raman Scattering by Structure Variation in Space.

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide

Raman Scattering, Far Infrared Spectrum and Photoluminescence of SnS2 Nanocrystallites

Investigation of Temperature-Dependent Phonon Anharmonicity and Thermal Transport in SnS Single Crystals

Morphology-Dependent Low-Frequency Raman Scattering in Ultrathin Spherical, Cubic, and Cuboid Sno2 Nanocrystals

Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2

Study of the Raman-Spectrum of Nanometer Sno2

Spotting the Differences in Two-Dimensional Materials - the Raman Scattering Perspective.

Tunable anisotropy in ReS 2 flakes achieved by Ar + ion bombardment probed by polarized Raman spectroscopy

Raman Spectroscopy Application in Anisotropic 2D Materials (Adv. Electron. Mater. 2/2024)

Anisotropic Raman spectrum and transport properties of AuTe<sub>2</sub>Br flakes.

Raman Scattering Study of Two-Dimensional Magnetic Van Der Waals Compound VI 3

Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates

Identifying, Resolving, and Quantifying Anisotropy in ReS2 Nanomechanical Resonators

Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2

Atomically Asymmetric Inversion Scales up to Mesoscopic Single-Crystal Monolayer Flakes

Strong Anharmonicity in Tin Monosulfide Evidenced by Local Distortion, High-Energy Optical Phonons, and Anharmonic Potential

Large Single Crystal Sns2 Flakes Synthesized from Coevaporation of Sn and S