Flexoelectric Behavior in Pin-Pmn-Pt Single Crystals over A Wide Temperature Range

Longlong Shu,Tao Li,Zhiguo Wang,Fei Li,Linfeng Fei,Zhenggang Rao,Mao Ye,Shanming Ke,Wenbin Huang,Yu Wang,Xi Yao
DOI: https://doi.org/10.1063/1.5001265
IF: 4
2017-01-01
Applied Physics Letters
Abstract:Flexoelectricity couples strain gradient to polarization and usually exhibits a large coefficient in the paraelectric phase of the ferroelectric perovskites. In this study, we employed the relaxor 0.3Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PIN-PMN-PT) single crystals to study the relationship between flexoelectric coefficients and the crystal structure. The flexoelectric coefficients in PIN-PMN-PT single crystal are found to vary from 57 μC/m at orthorhombic/monoclinic phase to 135 μC/m at tetragonal phase, and decreases to less than 27 μC/m in the temperature above Tm. This result discloses that ferroelectricity can significantly enhance the flexoelectricity in this kind of perovskite.
What problem does this paper attempt to address?