Realizing Bias-Induced Spin Transition with High-Spin MnII Complexes at Room Temperature

Hua Hao,Ting Jia,Xiaohong Zheng,Lingling Song,Zhi Zeng

DOI: https://doi.org/10.1039/c7tc03966b

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:Complexes in the ground state with high-spin magnetic ions (3d5/3d4) can be used to realize the electrically-induced spin-state transition and build room-temperature molecular transistors or memory devices.

What problem does this paper attempt to address?

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

Edgar A. Osorio,Kasper Moth-Poulsen,Herre S.J. van der Zant,Jens Paaske,Per Hedegard,Karsten Flensberg,Jesper Bendix,Thomas Bjornholm

DOI: https://doi.org/10.1021/nl9029785

2009-12-14

Abstract:We demonstrate an electrically controlled high-spin (S=5/2) to low-spin (S=1/2) transition in a three-terminal device incorporating a single Mn2+ ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.

Mesoscale and Nanoscale Physics,Materials Science
Bias Induced Spin State Transition Mediated by Electron Excitations.

Hua Hao,Ting Jia,Xiaohong Zheng,Peng Liu,Zhi Zeng

DOI: https://doi.org/10.1063/1.5126968

IF: 4.304

2020-01-01

The Journal of Chemical Physics

Abstract:Recent experiments reported that spin state transitions were realized by applying bias voltages. However, these bias-induced transitions are not fully understood, especially the mechanism. It is well established in experiments that the metal-to-ligand charge transfer (MLCT) excitation activated by light radiation can lead to the transition from low spin (LS) to high spin (HS), and the transition from HS to LS can be achieved by light due to the metal-centered (MC) excitation. Moreover, electronic excitations are accessible by inelastic cotunneling in molecular junctions under bias voltages. Based on these two facts, we propose that the MLCT excitation is responsible for the bias-induced transition from LS to HS, and the bias-induced transition from HS to LS is attributed to the MC excitation. The rationality of our proposed mechanism is demonstrated by comparing first-principles results and experimental observations. Threshold voltages of MLCT and MC excitations predicted in theory are consistent with bias voltages used to reach the transition from LS to HS and that from HS to LS in the experiment [Miyamachi et al., Nat. Commun. 3, 938 (2012)]. Activation of MLCT or MC excitation depends on the bias polarity, which can explain the bias-polarity dependence of the transition in the experiment. Our study is important for further design of molecular spintronic devices working on the bias-controlled transition.
Thermal and Magnetic Field Switching in a Two‐Step Hysteretic MnIII Spin Crossover Compound Coupled to Symmetry Breakings

Emiel Dobbelaar,Vibe B. Jakobsen,Elzbieta Trzop,Minseong Lee,Shalinee Chikara,Xiaxin Ding,Helge Muller-Bunz,Kane Esien,Solveig Felton,Michael A. Carpenter,Eric Collet,Grace G. Morgan,Vivien S. Zapf

DOI: https://doi.org/10.1002/anie.202114021

2021-01-01

Angewandte Chemie International Edition

Abstract:AbstractA MnIII spin crossover complex with atypical two‐step hysteretic thermal switching at 74 K and 84 K shows rich structural–magnetic interplay and magnetic‐field‐induced spin state switching below 14 T with an onset below 5 T. The spin states, structures, and the nature of the phase transitions are elucidated via X‐ray and magnetization measurements. An unusual intermediate phase containing four individual sites, where are in a pure low spin state, is observed. The splitting of equivalent sites in the high temperature phase into four inequivalent sites is due to a structural reorganization involving a primary and a secondary symmetry‐breaking order parameter that induces a crystal system change from orthorhombic→monoclinic and a cell doubling. Further cooling leads to a reconstructive phase transition and a monoclinic low‐temperature phase with two inequivalent low‐spin sites. The coupling between the order parameters is identified in the framework of Landau theory.
Reversible Switchability of Magnetic Anisotropy and Magnetodielectric Effect Induced by Intermolecular Motion

Shan-Nan Du,Dan Su,Ze-Yu Ruan,Ying-Qian Zhou,Wei Deng,Wei-Xiong Zhang,Young Sun,Jun-Liang Liu,Ming-Liang Tong

DOI: https://doi.org/10.1002/anie.202204700

2022-01-01

Angewandte Chemie International Edition

Abstract:AbstractIntroducing magnetic switchability into artificial molecular machines is fascinating for precise control of magnetism via external stimuli. Herein, a field‐induced CoII single‐molecule magnet was found to exhibit the reversible switch of Jahn–Teller distortion near room temperature, along with thermal conformational motion of the 18‐crown‐6 rotor, which pulls the coordinated H2O to rotate through intermolecular hydrogen bonds and triggers a single‐crystal‐to‐single‐crystal phase transition with Twarm=282 K and Tcool=276 K. Interestingly, the molecular magnetic anisotropy probed by single‐crystal angular‐resolved magnetometry revealed the reorientation of easy axis by 14.6°. Moreover, ON/OFF negative magnetodielectric effects were respectively observed in the high‐/low‐temperature phase, which manifests the spin‐lattice interaction in the high‐temperature phase could be stronger, in accompanied by the hydrogen bonding between the rotating 18‐crown‐6 and the coordinated H2O.
Thermodriven, Acidity-Driven, and Photodriven Spin-State Switching in Pyridylacylhydrazoneiron(II) Complexes at or above Room Temperature

Kai Yan Shen,Chen Ju Zhang,Lei Yu Qu,Shi Qing Jiang,Yi Zhang,Ming Liang Tong,Xin Bao

DOI: https://doi.org/10.1021/acs.inorgchem.1c02866

IF: 4.6

2021-11-16

Inorganic Chemistry

Abstract:The magnetic bistability of spin-crossover (SCO) materials is highly appealing for applications as molecular switches and information storage. However, switching of the spin state around room temperature remains challenging. In this work, we reported the successful manipulation of the spin states of two iron(II) complexes (1-Fe and 2-Fe) based on pyridylacylhydrazone ligands in manifold ways. Both complexes are stabilized in the low-spin (LS) state at room temperature because of the strong ligand-field strength imposed by the ligands. 2-Fe shows thermoinduced SCO above room temperature with a very large and reproducible hysteresis (>50 K), while 1-Fe remains in the LS state up to 400 K. Acidity-driven spin-state switching of the two complexes was achieved at room temperature as a result of the complex dissociation and release of iron(II) in its high-spin (HS) state. Recovery of the complex is feasible upon further alkalization treatment in the case of 1-Fe, allowing bidirectional modulation of the spin state of the metal center. Light-driven one-way switching from LS to HS is also achieved by virtue of E-to-Z isomerization at the C═N double bond, which results in dissociation of the complex because of the poor binding affinity in the Z configuration.

chemistry, inorganic & nuclear
Giant Magnetoelectric Coupling and Magnetic-Field-Induced Permanent Switching in a Spin Crossover Mn(III) Complex.

Vibe B. Jakobsen,Shalinee Chikara,Jie-Xiang Yu,Emiel Dobbelaar,Conor T. Kelly,Xiaxin Ding,Franziska Weickert,Elzbieta Trzop,Eric Collet,Hai-Ping Cheng,Grace G. Morgan,Vivien S. Zapf

DOI: https://doi.org/10.1021/acs.inorgchem.0c02789

IF: 4.6

2020-01-01

Inorganic Chemistry

Abstract:We investigate giant magnetoelectric coupling at a Mn3+ spin crossover in [MnIIIL]BPh4 (L = (3,5-diBr-sal)2323) with a field-induced permanent switching of the structural, electric, and magnetic properties. An applied magnetic field induces a first-order phase transition from a high spin/low spin (HS-LS) ordered phase to a HS-only phase at 87.5 K that remains after the field is removed. We observe this unusual effect for DC magnetic fields as low as 8.7 T. The spin-state switching driven by the magnetic field in the bistable molecular material is accompanied by a change in electric polarization amplitude and direction due to a symmetry-breaking phase transition between polar space groups. The magnetoelectric coupling occurs due to a γη2 coupling between the order parameter γ related to the spin-state bistability and the symmetry-breaking order parameter η responsible for the change of symmetry between polar structural phases. We also observe conductivity occurring during the spin crossover and evaluate the possibility that it results from conducting phase boundaries. We perform ab initio calculations to understand the origin of the electric polarization change as well as the conductivity during the spin crossover. Thus, we demonstrate a giant magnetoelectric effect with a field-induced electric polarization change that is 1/10 of the record for any material.
First-principles Study of Transition Metal Dopants As Spin Qubits

Longbing Shang,Qiaoling Chen,Weiguo Jing,Chong-Geng Ma,Chang-Kui Duan,Jiangfeng Du

DOI: https://doi.org/10.1103/physrevmaterials.6.086201

IF: 3.98

2022-01-01

Physical Review Materials

Abstract:Defect centers in solid-state materials have played an important role in the development of quantum information science as spin qubits. In recent years, many studies using optically detected magnetic resonance (ODMR) to manipulate the ground state spin of transition metal dopants have been reported. In this work, the tetrahedral d(2) and the octahedral d(3) transition metal ion systems are considered for the potential spin qubits, based on the ligand field theory and the basic requirements of general A-type spin qubits. Then a computational scheme based on density functional theory is performed on the transition metal ligand structures MXn(M = V, Cr, Mn, Fe; X = N, O, C; n = 4, 6) in several typical hosts to analyze quantitatively their feasibility. The results on the charge transition levels, excitation, and excited-state structure relaxation energies of MXn show that some of them have the proper valence states to form the required d(2) or d(3) electronic systems and the appropriate excited-state level structure with the spin-selective transition. The results on the spontaneous emission lifetime show that the MnO4 structure is mostly suitable for spin polarization due to the fastest optical transition rates among these systems considered. Finally, some suggestions on determining potentially feasible systems activated by transition metal ions in solids are given.
Room-temperature spin-orbit torque in NiMnSb

C. Ciccarelli,L. Anderson,V. Tshitoyan,A. J. Ferguson,F. Gerhard,C. Gould,L. W. Molenkamp,J. Gayles,J. Zelezny,L. Smejkal,Z. Yuan,J. Sinova,F. Freimuth,T. Jungwirth

DOI: https://doi.org/10.1038/nphys3772

2015-10-13

Abstract:Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneoulsy, the two atomic sites in the unit cell of these crystals form inversion partners which gives rise to relativistic non-equilibrium spin phenomena highly relevant for magnetic memories and other spintronic devices. When the inversion-partner sites are occupied by the same atomic species, electrical current can generate local spin polarization with the same magnitude and opposite sign on the two inversion-partner sites. In CuMnAs, which shares this specific crystal symmetry of the Si lattice, the effect led to the demonstration of electrical switching in an antiferromagnetic memory at room temperature. When the inversion-partner sites are occupied by different atoms, a non-zero global spin-polarization is generated by the applied current which can switch a ferromagnet, as reported at low temperatures in the diluted magnetic semiconductor (Ga,Mn)As. Here we demonstrate the effect of the global current-induced spin polarization in a counterpart crystal-symmetry material NiMnSb which is a member of the broad family of magnetic Heusler compounds. It is an ordered high-temperature ferromagnetic metal whose other favorable characteristics include high spin-polarization and low damping of magnetization dynamics. Our experiments are performed on strained single-crystal epilayers of NiMnSb grown on InGaAs. By performing all-electrical ferromagnetic resonance measurements in microbars patterned along different crystal axes we detect room-temperature spin-orbit torques generated by effective fields of the Dresselhaus symmetry. The measured magnitude and symmetry of the current-induced torques are consistent with our relativistic density-functional theory calculations.

Materials Science,Mesoscale and Nanoscale Physics
Room Temperature Hidden State in a Manganite Observed by Time-Resolved X-ray Diffraction

Haijuan Zhang,Yuanyuan Zhang,Runze Li,Junxiao Yu,Wenxia Dong,Conglong Chen,Kuidong Wang,Xiaodong Tang,Jie Chen

DOI: https://doi.org/10.1038/s41535-019-0170-3

IF: 6.856

2019-01-01

npj Quantum Materials

Abstract:Realizing active quantum control of materials near room temperature is one of the ultimate aims for their practical applications. Recent technological breakthroughs demonstrated that optical stimulation may lead to thermally inaccessible hidden states with unique properties. However, most of the reported hidden states were induced around or below liquid nitrogen temperature. Here, we optically manipulated a manganite near its Curie temperature of 300 K, where typically complex phase competitions locate as well as opportunities for new functionality. A room temperature hidden state was formed with threshold behavior evidenced by a femtosecond paramagnetic to ferromagnetic order switching and a structural change distinct from thermal induced lattice expansion in tens of picoseconds accompanying with phonon softening. We propose that such a hidden state originates from the charge transfer between antiferromagnetic chains after strongly correlated spin-charge quantum excitation, which subsequently initiates an orbital polarization rearrangement described as Mn_3x^2 - r^2/3y^2 - r^2^3 + Mn^4 + →Mn^4 + Mn_3z^2 - r^2^3 + and associated non-thermal lattice change. This study started from room temperature yet near a phase transition point, which suggests a new route to create or manipulate novel phases for practical purpose.
Voltage control of spin resonance in phase change materials

Tian-Yue Chen,Haowen Ren,Nareg Ghazikhanian,Ralph El Hage,Dayne Y. Sasaki,Pavel Salev,Yayoi Takamura,Ivan K. Schuller,Andrew D. Kent

2024-06-17

Abstract:Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in spin excitations are also expected. The transition metal oxide La0.7Sr0.3MnO3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic insulator above room temperature. When LSMO is in its metallic phase a critical electrical bias has been shown to lead to an MIT that results in the formation of a paramagnetic resistive barrier transverse to the applied electric field. Using spin-transfer ferromagnetic resonance spectroscopy, we show that even for electrical biases less than the critical value that triggers the MIT, there is magnetic phase separation with the spin-excitation resonances varying systematically with applied bias. Thus, applied voltages provide a means to alter spin resonance characteristics of interest for neuromorphic circuits.

Applied Physics,Materials Science
Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Peixin Qin,Han Yan,Xiaoning Wang,Hongyu Chen,Ziang Meng,Jianting Dong,Meng Zhu,Jialin Cai,Zexin Feng,Xiaorong Zhou,Li Liu,Tianli Zhang,Zhongming Zeng,Jia Zhang,Chengbao Jiang,Zhiqi Liu

DOI: https://doi.org/10.1038/s41586-022-05461-y

IF: 64.8

2023-01-19

Nature

Abstract:Antiferromagnetic spintronics 1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16 is a rapidly growing field in condensed-matter physics and information technology with potential applications for high-density and ultrafast information devices. However, the practical application of these devices has been largely limited by small electrical outputs at room temperature. Here we describe a room-temperature exchange-bias effect between a collinear antiferromagnet, MnPt, and a non-collinear antiferromagnet, Mn 3 Pt, which together are similar to a ferromagnet–antiferromagnet exchange-bias system. We use this exotic effect to build all-antiferromagnetic tunnel junctions with large nonvolatile room-temperature magnetoresistance values that reach a maximum of about 100%. Atomistic spin dynamics simulations reveal that uncompensated localized spins at the interface of MnPt produce the exchange bias. First-principles calculations indicate that the remarkable tunnelling magnetoresistance originates from the spin polarization of Mn 3 Pt in the momentum space. All-antiferromagnetic tunnel junction devices, with nearly vanishing stray fields and strongly enhanced spin dynamics up to the terahertz level, could be important for next-generation highly integrated and ultrafast memory devices 7,9,16 .

multidisciplinary sciences
Coherent spin control by electrical manipulation of the magnetic anisotropy

Richard E George,James P Edwards,Arzhang Ardavan

DOI: https://doi.org/10.1103/PhysRevLett.110.027601

2012-10-23

Abstract:High-spin paramagnetic manganese defects in polar piezoelectric zinc oxide exhibit a simple almost axial anisotropy and phase coherence times of the order of a millisecond at low temperatures. The anisotropy energy is tunable using an externally applied electric field. This can be used to control electrically the phase of spin superpositions and to drive spin transitions with resonant microwave electric fields.

Materials Science,Mesoscale and Nanoscale Physics,Quantum Physics
A Trinuclear {feiii2feii} Complex Involving Both Spin and Non-Spin Transitions Exhibits Three-Step and Wide Thermal Hysteresis

Zhao Xin-Hua,Shao Dong,Chen Jia-Tao,Gan De-Xuan,Yang Jiong,Zhang Yuan-Zhu

DOI: https://doi.org/10.1007/s11426-021-1153-0

2022-01-01

Science China Chemistry

Abstract:The engineering of switchable molecules with magnetic multistability is lying on the cutting-edge research topics for integrating multi-switches and ternary memory devices. Here we presented a cyanide-bridged {FeIII2FeII} desolvated complex {[(pzTp)FeIII-(CN)3]2[FeII(L)]} (1), obtained through single-crystal-to-single-crystal (SCSC) transformation from its solvated phase {[(pzTp)-FeIII(CN)3]2[FeII(L)]}·2CH3OH·5H2O (1·sol). Remarkably, 1 exhibited unprecedented three-step transition in magnetization with wide thermal hysteresis (44, 40, and 36 K) in the temperature range of 80–320 K. The detailed studies demonstrated that the tristable character originates from both an order-disorder structural phase transition (SPT) and a strongly cooperative two-step spin crossover (SCO) process. This work thus provides a new promising strategy for realizing multiple bistablity in magnetization by introducing two different transitions.
Room-temperature polarization and spin switching via electron transfer in a valence tautomer

Zhen Liu,Xiao-Yi Zhang,Zhi-Rui Li,Han Xu,Hai-Xia Zhao,La-Sheng Long,Lan-Sun Zheng

DOI: https://doi.org/10.1007/s11426-024-2288-1

2024-11-21

Science China Chemistry

Abstract:Achieving simultaneous polarization and spin switching at room temperature is essential for advanced multi-state storage and control applications, particularly in magnetoelectrics and electron spintronics, yet such materials are exceedingly rare. Based on polar molecular valence tautomerism of Co III (3,5-DBcat)(3,5-DBsq)( trans -4-stypy) 2 ( 1 ), room-temperature spin and polarization switching was achieved via electron transfer. Notably, the ferroelectric polarization and spin switching in 1 are modulated by both temperature and light. The successful implementation of room-temperature polarization and spin switching in 1 signifies an important advancement toward practical applications.

chemistry, multidisciplinary
Electric-field control of spin dynamics during magnetic phase transitions

Tianxiang Nan,Yeonbae Lee,Shihao Zhuang,Zhongqiang Hu,Xinjun Wang,Changhyun Ko,HwanSung Choe,Zuhuang Chen,David Budil,Junqiao Wu,Sayeef Salahuddin,Jiamian Hu,Ramamoorthy Ramesh,Nian Sun,James D. Clarkson

DOI: https://doi.org/10.1126/sciadv.abd2613

IF: 13.6

2020-10-02

Science Advances

Abstract:Phase change materials help realize voltage tunable spin dynamics.

multidisciplinary sciences
Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen

DOI: https://doi.org/10.1038/s41535-021-00397-4

IF: 6.856

2021-11-18

npj Quantum Materials

Abstract:Abstract Realizing applicably appreciated spintronic functionalities basing on the coupling between charge and spin degrees of freedom is still a challenge. For example, the anisotropic magnetoresistance (AMR) effect can be utilized to read out the information stored in magnetic structures. However, the application of AMR in antiferromagnet-based spintronics is usually hindered by the small AMR value. Here, we discover a colossal AMR with its value reaching 1.84 × 10 6 % at 2 K, which stems from the field-induced metal-to-insulator transition (MIT), in a nearly Dirac material EuMnSb 2 . Density functional theory calculations identify a Dirac-like band around the Y point that depends strongly on the spin–orbit coupling and dominates the electrical transport. The indirect band gap at the Fermi level evolves with magnetic structure of Eu 2+ moments, consequently giving rise to the field-induced MIT and the colossal AMR. Our results suggest that the antiferromagnetic topological materials can serve as a fertile ground for spintronics applications.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
High-temperature concomitant metal-insulator and spin-reorientation transitions in a compressed nodal-line ferrimagnet Mn3Si2Te6

Resta A Susilo,Chang Il Kwon,Yoonhan Lee,Nilesh P Salke,Chandan De,Junho Seo,Beomtak Kang,Russell J Hemley,Philip Dalladay-Simpson,Zifan Wang,Duck Young Kim,Kyoo Kim,Sang-Wook Cheong,Han Woong Yeom,Kee Hoon Kim,Jun Sung Kim

DOI: https://doi.org/10.1038/s41467-024-48432-9

2024-05-11

Abstract:Symmetry-protected band degeneracy, coupled with a magnetic order, is the key to realizing novel magnetoelectric phenomena in topological magnets. While the spin-polarized nodal states have been identified to introduce extremely-sensitive electronic responses to the magnetic states, their possible role in determining magnetic ground states has remained elusive. Here, taking external pressure as a control knob, we show that a metal-insulator transition, a spin-reorientation transition, and a structural modification occur concomitantly when the nodal-line state crosses the Fermi level in a ferrimagnetic semiconductor Mn3Si2Te6. These unique pressure-driven magnetic and electronic transitions, associated with the dome-shaped Tc variation up to nearly room temperature, originate from the interplay between the spin-orbit coupling of the nodal-line state and magnetic frustration of localized spins. Our findings highlight that the nodal-line states, isolated from other trivial states, can facilitate strongly tunable magnetic properties in topological magnets.
Field-Free Spin-Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane Exchange Bias

Ruobai Liu,Jiarui Chen,Zhuoyi Li,Xianyang Lu,Yu Lu,Tianyu Liu,Yiyang Zhang,Yuan Yuan,Lujun Wei,Di Wu,Biao You,Wei Zhang,Jun Du

DOI: https://doi.org/10.1021/acsami.3c12061

IF: 9.5

2023-10-25

ACS Applied Materials & Interfaces

Abstract:Spin-orbit torque (SOT)-induced magnetization switching in ferrimagnetic materials is promising for application in a new generation of information storage devices. Here, we demonstrate SOT-induced field-free magnetization switching of the perpendicularly magnetized CoTb ferrimagnet layer in the IrMn/CoTb bilayer, in which the in-plane magnetic inversion symmetry is broken by a spontaneous in-plane exchange bias (IEB) established by isothermal crystallization of the IrMn layer. We obtain a...

materials science, multidisciplinary,nanoscience & nanotechnology
Time-resolved detection of spin–orbit torque switching of magnetization and exchange bias

Yuyan Wang,Takuya Taniguchi,Po-Hung Lin,Daniel Zicchino,Andreas Nickl,Jan Sahliger,Chih-Huang Lai,Cheng Song,Huaqiang Wu,Qionghai Dai,Christian H. Back

DOI: https://doi.org/10.1038/s41928-022-00870-3

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Current-induced magnetization switching driven by spin–orbit torques on sub-nanosecond timescales could be used to create fast and low-power spintronic devices. The time-resolved detection and analysis of switching trajectories in ferromagnet/antiferromagnet exchange-biased structures are the key to designing spin–orbit torque devices with high speed, but insight remains limited. Here we report the time-resolved detection of spin–orbit torque switching of the magnetization and exchange bias in platinum/cobalt/iridium–manganese heterostructures. Using time-resolved magneto-optical Kerr microscopy, combined with micromagnetic simulations, we show that the ferromagnets, as well as interfacial antiferromagnetic spins and exchange bias, can be partially switched by sub-nanosecond current pulses, which allows the switching probabilities to be flexibly controlled at multiple levels. We also show that the spin–orbit-torque-induced switching of the exchange bias, which intimately depends on the current density, can stabilize multilevelled magnetization switching within sub-nanosecond current pulses.
Light-Controlled Ultrafast Magnetic State Transition in Antiferromagnetic-Ferromagnetic Van Der Waals Heterostructures.

Shuo Li,Liujiang Zhou,Thomas Frauenheim,Junjie He

DOI: https://doi.org/10.1021/acs.jpclett.2c01476

2022-01-01

Abstract:Manipulating spin in antiferromagnetic (AFM) materials has great potential in AFM opto-spintronics. Laser pulses can induce a transient ferromagnetic (FM) state in AFM metallic systems but have never been proven in two-dimensional (2D) AFM semiconductors and related van der Waals (vdW) heterostructures. Herein, using 2D vdW heterostructures of FM MnS2 and AFM MXenes as prototypes, we investigated optically induced interlayer spin transfer dynamics based on real-time time-dependent density functional theory. We observed that laser pulses induce significant spin injection and interfacial atom-mediated spin transfer from MnS2 to Cr2CCl2. In particular, we first demonstrated the transient FM state in semiconducting AFM-FM heterostructures during photoexcited processes. The proximity magnetism breaks the magnetic symmetry of Cr2CCl2 in heterostructures. Our results provide a microscopic understanding of optically controlled interlayer spin dynamics in 2D magnetic heterostructures and open a new way to manipulate magnetic order in 2D materials for ultrafast opto-spintronics.

Realizing Bias-Induced Spin Transition with High-Spin MnII Complexes at Room Temperature

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

Bias Induced Spin State Transition Mediated by Electron Excitations.

Thermal and Magnetic Field Switching in a Two‐Step Hysteretic MnIII Spin Crossover Compound Coupled to Symmetry Breakings

Reversible Switchability of Magnetic Anisotropy and Magnetodielectric Effect Induced by Intermolecular Motion

Thermodriven, Acidity-Driven, and Photodriven Spin-State Switching in Pyridylacylhydrazoneiron(II) Complexes at or above Room Temperature

Giant Magnetoelectric Coupling and Magnetic-Field-Induced Permanent Switching in a Spin Crossover Mn(III) Complex.

First-principles Study of Transition Metal Dopants As Spin Qubits

Room-temperature spin-orbit torque in NiMnSb

Room Temperature Hidden State in a Manganite Observed by Time-Resolved X-ray Diffraction

Voltage control of spin resonance in phase change materials

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

Coherent spin control by electrical manipulation of the magnetic anisotropy

A Trinuclear {feiii2feii} Complex Involving Both Spin and Non-Spin Transitions Exhibits Three-Step and Wide Thermal Hysteresis

Room-temperature polarization and spin switching via electron transfer in a valence tautomer

Electric-field control of spin dynamics during magnetic phase transitions

Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

High-temperature concomitant metal-insulator and spin-reorientation transitions in a compressed nodal-line ferrimagnet Mn3Si2Te6

Field-Free Spin-Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane Exchange Bias

Time-resolved detection of spin–orbit torque switching of magnetization and exchange bias

Light-Controlled Ultrafast Magnetic State Transition in Antiferromagnetic-Ferromagnetic Van Der Waals Heterostructures.