Effect of Mn-doping on Dielectric Relaxation Behavior of Pb(In1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 Ferroelectric Ceramics

Xudong Qi,Enwei Sun,Rui Zhang,Bin Yang,Shiyang Li,Wenwu Cao
DOI: https://doi.org/10.1016/j.ceramint.2017.09.079
IF: 5.532
2017-01-01
Ceramics International
Abstract:The phase transition characteristics, dielectric relaxation behavior, and ferroelectric hysteresis in undoped and Mn-doped 0.24Pb(In1/2Nb1/2)O-3-0.42Pb(Mg1/3Nb2/3)O-3-0.34PbTiO(3) (24PIN-42PMN-34PT) ternary ceramics have been investigated. The degree of diffuse phase transition (DPT) is enhanced by the addition of manganese due to the disorder-enhanced structure. The temperature dependence of the dielectric permittivity can be well described by the Lorentz-type quadratic relationship at the temperature range of T-m-600 K and Curie-Weiss law at T > 630 K, respectively. In addition, the frequency dispersion of dielectric permittivity is greatly suppressed and hysteresis loops are pinched at room temperature, which is attributed to the internal bias field created by the defect dipoles after introducing Mn ion.
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