Occurrence and Suppression of Transition Behavior of Reduced Graphene Oxide Thin Film for Gas Sensing

Yong Zhou,Guoqing Liu,Xiangyi Zhu,Yongcai Guo
DOI: https://doi.org/10.1007/s10854-017-7657-0
2017-01-01
Journal of Materials Science Materials in Electronics
Abstract:In this paper, we prepared reduced graphene oxide (RGO) thin film by simple airbrush technology and then studied its gas-sensing behaviors at room temperature. On exposure to dynamic NO2 gas, RGO thin film showed a time-resolved n–p transition process (n-type switched to p-type), due to its weak n-type properties arising from hydrazine-reduction method and strong electron-accepting NO2 molecules. As RGO amount was added, the time taken to run through this transition became longer. On consecutive exposures to NO2 and NH3 gases, p–n transition (p-type switched to n-type) emerged as well. To suppress these transition behaviors, CuCl was incorporated into RGO material, resulting in opposite p-type characteristics for the composite film as well as no occurrence of p–n transition during the sensing tests. Compared to pure RGO counterpart, RGO/CuCl film had a six-fold response enhancement and a likewise good repeatability toward 10 ppm NH3 within four cyclic periods. We expect that the proposed research on transition behaviors and relevant suppression methods will shed new light on gas-sensing mechanisms and improve operation stability of RGO based sensors.
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