Abstract:The success of fabricating single layer graphene and silicon nanofilm (could be as thin as single layer so far) has triggered enormous interest in exploring their unique physics and novel applications. An intuitive idea is to investigate what happens if we construct a heterostructure composed of these two sheets. In this paper, we perform nonequilibrium molecular dynamics simulations to systematically investigate the in-plane thermal transport in graphene/silicon/graphene (Gr/Si/Gr) heterostructures. The effects of Si film thickness, interfacial interaction strength, and length on the thermal conductivity of the Gr/Si/Gr heterostructures are explicitly considered. Our simulations identify a unified scaling law for thickness dependence of thermal conductivity of the Gr/Si/Gr heterostructures, despite different interfacial interaction forms are used (weak van der Waals interaction and strong covalent bonding). By quantifying relative contribution from phonon polarizations and defining heat flux onto single atom, we reveal and fully understand the different mechanisms governing the phonon transport in the Gr/Si/Gr heterostructures for the two different interfacial interaction forms. We also found that the thermal conductivity of Gr/Si/Gr heterostructure is nonmonotonically dependent on the van der Waals interaction strength between graphene and Si, but monotonically dependent on the graphene-silicon covalent bonding strength. Moreover, length dependence study shows that phonon transport in Gr/Si/Gr heterostructure becomes diffusive at much shorter length as compared with single layer graphene and bilayer graphene. Comparing to single and double graphene layers, the thermal conductivity of the Gr/Si/Gr heterostructure can be reduced with more than one order of magnitude for very long structures. These results suggest that Gr/Si/Gr heterostructures are promising for nanoscale devices due to their unique thermal transport properties.

Thermal Boundary Resistance Between the Polycrystalline Graphene and the Amorphous SiO2 Substrate

Near-field radiative heat transfer and van der Waals friction between closely spaced graphene and amorphous SiO$_2$

Phonon non-equilibrium effects on interface thermal resistance between graphene and substrates

Unraveling the Mechanisms of Thermal Boundary Conductance at the Graphene-Silicon Interface: Insights from Ballistic, Diffusive, and Localized Phonon Transport Regimes

The Strain-Dependent Interfacial Thermal Resistance at Graphene-Silicon Interface under Various Deformation Conditions

Substrate Effects on the Thermal Performance of In-Plane Graphene/hexagonal Boron Nitride Heterostructures

Dual Effects of Hetero-Interfaces on Phonon Thermal Transport Across Graphene/c3n Lateral Superlattices

Interfacial Thermal Resistance Across Graphene/Al2o3 and Graphene/Metal Interfaces and Post-Annealing Effects

Interfacial Thermal Resistance and Thermal Rectification Between Suspended and Encased Single Layer Graphene

Theory of Substrate-Directed Heat Dissipation for Single-Layer Graphene and Other Two-Dimensional Crystals

Thermal Transfer in Graphene-Interfaced Materials: Contact Resistance and Interface Engineering.

Substrate Effects on the Thermal Conductivity of Single Layer Supported Graphene

Non-equilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Phonon-interface scattering in multilayer graphene on an amorphous support

Thermal Contact Resistance Across Nanoscale Silicon Dioxide and Silicon Interface

Molecular Dynamics Simulation of the Interfacial Thermal Resistance Between Phosphorene and Silicon Substrate

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Thermal Conductivity of Hybrid Graphene/silicon Heterostructures

Heat dissipation at a graphene-substrate interface.

Thermal contact resistance between graphene and silicon dioxide

Bilateral Substrate Effect on the Thermal Conductivity of Two-Dimensional Silicon