Influence of Bi3+ Content on Photoluminescence of Innbo4: Eu3+, Bi3+ for White Light-Emitting Diodes

An Tang,Liduo Gu,Fengxiang Shao,Xidong Liu,Yongtao Zhao,Haijun Chen,Hongsong Zhang

DOI: https://doi.org/10.1515/msp-2017-0053

2017-01-01

Materials Science-Poland

Abstract:AbstractA series of red-emitting phosphors InNbO4:Eu3+,Bi3+was prepared by a high temperature solid-state reaction. The structure, size distribution and luminescence properties of the phosphors were respectively characterized by X-ray diffraction (XRD), laser particle size and molecular fluorescence spectrometer. The XRD results indicate that the phase-pure samples have been obtained and the crystal structure of the host has not changed under the Eu3+and Bi3+co-doping. The test of size distribution shows that the phosphor has a normal size distribution. The excitation spectra illustrate that the dominant sharp peaks are located at 394 nm (7F0→5L6) and 466 nm (7F0→5D2). Meanwhile, the emission spectra reveal that the phosphors excited by the wavelength of 394 nm or 466 nm have an intense red-emission line at 612 nm owing to the5D0→7F2transition of Eu3+. Bi3+doping has not changed the peak positions except the photoluminescence intensity. The emission intensity is related to Bi3+concentration, and it is up to the maximum when the Bi3+-doping concentration is 4 mol%. Due to good photoluminescence properties of the phosphor, the InNbO4:0.04Eu3+,0.04Bi3+may be used as a red component for white light-emitting diodes.