Abstract:Phase‐change memory is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with current manufacturing processes and the good scaling behavior. Despite intensive research efforts that are devoted to the modification of Ge2Sb2Te5 (GST) phase‐change material, the obtained improvements are still unsatisfactory for high‐performance applications. In this paper, SiC‐modification is first introduced to enhance the amorphous stability of GST without sacrificing its transition speed. Several enhancements can be demonstrated, including better thermal stability (10‐year data retention above 120 °C), lower RESET voltage (about 3.0 V at 20 ns pulse width), reduced volume change (smaller than 3.0%), and expected operation cycles (more than 1.0 × 105). According to the findings, the local bonding nature of Ge/Te atoms can be tuned by C/Si dopants through forming CGe and SiTe bonds. Apart from strengthening the atomic binding network for desirable data retention, the element interdiffusion is also effectively controlled and suppressed. Together with finer grains, smaller density change, and more uniform morphology, the modified structure transition finally contributes to the reduced switching voltage and long‐term endurance. Hence, it is envisaged that SiC‐doped GST with such advantages will give a competitive option for high‐density and high‐performance embedded memory.

Ohmic Contact Formation Between Ge2sb2te5 Phase Change Material and Vertically Aligned Carbon Nanotubes

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

A Nano-Scale-Sized 3d Element for Phase Change Memories

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Conductive Atomic Force Microscopy (C-AFM) Observation of Conducting Nanofilaments Formation in GeSbTe Phase Change Materials

Advantage of Ti-Doped Ge2Sb2Te5 Material for Phase Change Memory Applications

SiC‐Doped Ge2Sb2Te5 Phase‐Change Material: A Candidate for High‐Density Embedded Memory Application

Performance Analysis Of Carbon Nanotube Contacted Phase Change Memory By Finite Element Method

In-situ Observation of Ge2Sb2Te5 Crystallization at the Passivated Interface

In Situ Insight into Temperature-Dependent Microstructure Evolution of Carbon Doped Phase Change Materials

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Microscopic Mechanism of Carbon-Dopant Manipulating Device Performance in CGeSbTe-Based Phase Change Random Access Memory

Reduced Operating Voltage in Nanotube-Shaped Ge2sb2te5 Unites by Nanosphere Lithography

A Comparison Of The Ge-Sb-Te And Si-Sb-Te Film Oxidization At Atmosphere