Abstract:In this paper, by choosing FeNiMnCo alloy as a catalyst and the (100) face of a seed crystal as the growth face, high quality type Ib and type IIa large diamond single crystals (diameter about 3-4 mm) can be successfully synthesized using temperature gradient method, at 5.6 GPa pressure and different temperatures between 1250-1340 ℃. To control the diamond crystal morphology, the growth temperature should be adjusted. Then the morphology of the synthesized large diamonds is plate-like at low temperatures, tower-like at medium temperatures, and spire tower-like at high temperatures. For the same crystal morphology, the synthetic temperature of type IIa diamond single crystals is about 30 ℃ higher than that of type Ib. The central and angularity regions of the top (100) surface, for the synthesized samples of type Ib and type IIa large diamond single crystals at different temperatures, are examined by laser Raman microscope respectively. It is found that the black lines of the type Ib and type IIa large diamond single crystals become dimmed and dense on the same top surface from center to the edge. It is indicated that the priority growth mechanism is in the angularity regions, compared with the central regions. Namely the solute of carbon is primarily precipitated in the angularity regions of the (100) surface. With increasing synthesis temperature, the black lines on the top surface (100) of type Ib diamond single crystals become gradually denser, and the characteristics of the lines are transformed from irregular distribution to typical dendritic distribution. The reason of the above results is that the rate of carbon deposition (the growth rate of diamond crystal), which is along the direction of the diamond crystal [100], will gradually rise as the synthesis temperature of the crystal is increased. The characteristics of the lines on the top surfaces (100) of type IIa large diamond single crystals, which are synthesized under different temperatures, are similar to that of type Ib. However, the lines on the top (100) surface of type IIa diamonds are not so obvious and denser than that of type Ib diamonds at different synthesis temperatures. Similar characteristics of lines on the top (100) surface of both types of diamond single crystals can be explained by the axis and radial growth rate variation at different temperatures. These different characteristics of the lines are due to the fact that the growth rate of type IIa diamonds is slower than that of type Ib diamonds, and the nitrogen concentrations in type IIa diamonds are lower than those of type Ib diamonds. Finally, the full width at half maximum (5.554 cm-1) of the tower-like type IIa diamond is narrower than that (5.842 cm-1) of tower-like type Ib diamond from the test of Raman spectra. It is shown that the quality of type IIa diamond single crystals is better than that of type Ib.

Different Effect of Nimnco or Fenico on the Growth of Type-Iia Large Diamonds with Ti/Cu As Nitrogen Getter

The growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure

The effect of Ni content in metal solvent on diamond growth and N-related defects

Synthesis and nitrogen content regulation of diamond in high pressure hydrogen rich environment

Effect of nitrogen–hydrogen co-doping on diamond growth

Synthesis and Characterization of A Single Diamond Crystal with A High Nitrogen Concentration

Dependence of Nitrogen Concentration in Type Ib Diamonds on Synthesis Temperature

Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature

The Crystal Stock Phenomenon in the Process of the Plate Shape for Type Ib Large Synthetic Diamond Single Crystals

Effects of Ti Additive on HPHT Diamond Synthesis in Fe-Ni-C System

Effects of B-NiS co-doping on diamonds growing along {111}-orientation under high pressure and high temperature

Effects of Carbonyl Nickel Powders on {100}-Oriented Single Diamond under High Pressure and High Temperature

Effects of additive NaN 3 on the HPHT synthesis of large single crystal diamond grown by TGM

Effects of B-NiS Co-Doping on Diamonds Growing along {1 1 1}-Orientation under High Pressure and High Temperature

Growth of Gem-Grade Nitrogen-Doped Diamond Crystals Heavily Doped with the Addition of Ba(N-3)(2)

Characteristics of Diamond Crystals from FeNiCo-C System with Ge Doping under High Pressure and High Temperature

Synthesis and Characteristics of Type Ib Diamond Doped with NiS As an Additive

Effect of Temperature on the (100) Surface Features of Type Ib and Type IIa Large Single Crystal Diamonds

Effects of a Carbon Convection Field on Large Diamond Growth under High-Pressure High-Temperature Conditions

Nitrogen concentration control during diamond growth for NV- centre formation