Abstract:To date, most of the reported conjugated materials are p-type semiconductors, while the advances in n-type or ambipolar conjugated materials greatly fall behind those in p-type counterparts. Well-defined n-type semiconductors should possess suitable electron-deficient groups and relatively low lowest unoccupied molecular orbitals (LUMO) levels that facilitate the electron injection and stabilize the electron transport. Thus, developing novel n-type semiconductor materials with strong electron-deficient property, high electron mobility, and competitive stability is still highly desirable, though challenging. Herein, a new isoindigo-based dimeric aza-boron dipyrromethene (aza-BODIPY) chromophore (IIDG-AB) is designed and synthesized. IIDG-AB contains multiple fluorine and unsaturated nitrogen atoms, which endow it with strong electron-deficient property as well as an ultra-low LUMO level of only-4.24 eV. In addition, IIDG-AB features a large conjugation system and a high degree of coplanarity, which are beneficial for effective intermolecular charge transfer. The UV/visible absorption spectra, X-ray diffraction analysis, and morphological studies via atomic force microscopy imaging indicate that the IIDG-AB thin film presents strong aggregation, good it-it stacking, and long-range order packing, all of which are favorable for the electron transfer between neighboring molecules. Furthermore, IIDG-AB-based organic field-effect transistors exhibit a moderate stable n-type behavior with the highest electron mobility of 1.1 x 10(-1) cm(2) V-1 s(- 1). This work provides a simple and effective strategy to synthesize highly functional n-type chromophores via a Schiff base reaction between bislactams and heteroaromatic amines, and also paves the way for future design to fabricate high-performance n-type semiconductor materials for a wide range of applications.

A Solution-Processed and Low Threshold Voltage P-Type Small Molecule Based on Indolocarbazole- and Benzothiophene-Fused Rings

Hepta‐thienoacenes with Internal Carbazole: Synthesis, Regioselectivities and Organic Field‐Effect Transistor Applications

Diketopyrrolopyrrole-based small molecules for solution-processed n-channel organic thin film transistors

Conjugated Polymers Based on Thiazole Flanked Naphthalene Diimide for Unipolar N-Type Organic Field-Effect Transistors

Aceno[2,1,3]Thiadiazoles for Field-Effect Transistors: Synthesis and Crystal Packing

Novel conjugated polymers based on dithieno[3,2-b:6,7-b]carbazole for solution processed thin-film transistors.

Isoindigo-based Aza-Bodipy Small Molecule for N-type Organic Field-Effect Transistors

Palladium-Catalyzed Carbonylative Annulation Toward New [1,2,5] Thiadiazole-Fused Heteroacenes for Solution-Processed Field-Effect Transistors

IDTI based copolymers for p-type organic field-effect transistors

Indolo[3,2-b]carbazole-based Non-Fullerene Acceptors for Organic Photovoltaic Cells

Synthesis, Photophysical and Electrochemical Properties and Theoretical Studies on Three Novel Indolo[3,2-B]Carbazole Derivatives Containing Benzothiazole Units

Polymer Based on Benzothiadiazole-Bridged Bis-Isoindigo for Organic Field-Effect Transistor Applications

Benzothiadiazole versus Thiazolobenzotriazole: A Structural Study of Electron Acceptors in Solution-Processable Organic Semiconductors

Synthesis and Properties of Heteroacenes Containing Pyrrole and Thiazine Rings As Promising N‐type Organic Semiconductor Candidates

Chlorine-Substituted N-Heteroacene Analogues Acting As Organic Semiconductors for Solution-Processed N-Type Organic Field-Effect Transistors.

6H-Pyrrolo[3,2-b:4,5-B′]bis[1,4]benzothiazines: Facilely Synthesized Semiconductors for Organic Field-Effect Transistors

Confronting positions: para-vs. meta-functionalization in triindole for p-type air-stable OTFTs

High-Performance Organic Field-Effect Transistors Fabricated Based on a Novel Ternary Π-Conjugated Copolymer.

Alkylated Indolo[3,2,1-Jk]carbazoles As New Building Blocks for Solution Processable Organic Electronics

N-Type Semiconducting Polymers Based on an Bithiophene Imide-Bridged Isoindigo for Organic Field-Effect Transistors

Solution-processed and Air-Stable N-Type Organic Thin-Film Transistors Based on Thiophene-Fused Dicyanoquinonediimine (DCNQI) Deriatives.