In-plane quasi-single-domain BaTiO$_3$ via interfacial symmetry engineering
J. W. Lee,K. Eom,T. R. Paudel,B. Wang,H. Lu,H. Huyan,S. Lindemann,S. Ryu,H. Lee,T. H. Kim,Y. Yuan,J. A. Zorn,S. Lei,W. Gao,T. Tybell,V. Gopalan,X. Pan,A. Gruverman,L. Q. Chen,E. Y. Tsymbal,C. B. Eom
DOI: https://doi.org/10.1038/s41467-021-26660-7
2021-09-17
Abstract:The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO$_3$ thin films. Theoretical calculations predict the key role of the BaTiO$_3$ / PrScO$_3$ (110)$_O$ substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
Materials Science