Oxidation Induced Stress In Sio2/Sic Structures

Xiuyan Li,A. V. Ermakov,Voshadhi Amarasinghe,Eric Garfunkel,T. Gustafsson,L. C. Feldman

DOI: https://doi.org/10.1063/1.4979544

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Physical stress in SiO2/SiC stacks formed by the thermal oxidation of SiC is studied experimentally through both room temperature ex-situ and variable temperature (25-1150 degrees C) in-situ investigations. Mechanisms giving rise to the stress are a thermal component, associated with differences in thermal expansion coefficients of the oxide and the substrate, and an intrinsic component associated with the different atomic densities and structure of the film and substrate. Ex-situ results show a similar to 10(8) Pa compressive stress in the SiO2 film in a SiO2/SiC stack with a strong crystal face dependence (C face(000 (1) over bar) and Si face (0001)) and processing (temperature, growth rate) dependence. Real-time stress determination demonstrates that at temperatures above similar to 900 degrees C, the total intrinsic stress and a portion of the thermal stress may be relieved. On the basis of these findings, a viscous model is proposed to discuss the stress relaxation. Published by AIP Publishing.