Shock-Resistibility of MEMS-Based Inertial Microswitch under Reverse Directional Ultra-High G Acceleration for IoT Applications

Qiu Xu,Zhuoqing Yang,Yunna Sun,Liyan Lai,Zhiyu Jin,Guifu Ding,Xiaolin Zhao,Jinyuan Yao,Jing Wang

DOI: https://doi.org/10.1038/srep45512

2017-01-01

Abstract:The paper reports a novel inertial microswitch with multi-directional compact constraint structures for improving the shock-resistibility. Its shock-resistibility in the reverse sensitive directional ultra-high g acceleraiton (∼hunderds of thounsands) is simulated and analyzed. The dynamic response process indicates that in the designed inertial microswitch the proof mass weight G, the whole system stiffness k and the gap X 2 between proof mass and reverse constraint blocks have significant effect on the shock-resistibility. The fabricated inertial microswitch by surface micromachining technology has been evaluated by the dropping hammer system. The test results show that the reverse resistant threshold acceleration a thr increases with the decrease of the gap x 2 . The testing comparison of the microswitches with and without constraint structure indicates that the designed constraint structures can effectively improve the shock-resistibility.