Influence of Oxygen Vacancy on Persistent Luminescence in Znga2o4:Cr3+ and Identification of Electron Carriers

J. Su,S. Ye,X. Yi,F. Q. Lu,X. B. Yang,Q. Y. Zhang

DOI: https://doi.org/10.1364/ome.7.000734

2017-01-01

Optical Materials Express

Abstract:ZnGa2O4:Cr3+ is an outstanding near-infrared (NIR) long-lasting phosphorescence (LLP) material with afterglow duration of more than 5h, which is potentially applicable in bioimaging. The well-studied antisite Ga-Zn(center dot) and Zn-Ga defects are reported to serve as shallow traps responsible for the persistent luminescence. The less-studied but commonly available oxygen vacancy in this material may be associated with deep traps, which is barely investigated but of significance to influence the luminescence and LLP behavior. Moreover, persistent luminescence mechanisms associated with shallow and deep traps require identification of the carriers. This research attempts to reveal the detail of deep traps and the mechanism involved, with the assistance of photoluminescence (PL), thermoluminescence (TL), and alternating current (AC) impedance spectroscopy as well as density functional theory (DFT) calculations. Results show that the V-O(center dot center dot) defects in the neighbor of Cr3+ could probably change the contents of antisite defects and result in variation of R/N-2 ratio in PL and afterglow spectra. V-O(center dot center dot) defects may also serve as the deep traps, which might agglomerate with Cr3+ and antisite defects to form cluster that is responsible for visible-light-stimulated LLP but with a negative effect. The research would be beneficial in understanding the common LLP phenomenon. (C) 2017 Optical Society of America