Abstract:A series of hyperbranched polyimides (HBPIs) were synthesized by reacting a triamine monomer N,N',N "-tris(4-methoxyphenyl)-N,N',N "-tris(4-phenylamino)-1,3,5-benzenetriamine with various dianhydrides such as oxydiphthalic dianhydride (ODPA), 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride (DSDA), 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), and pyromellitic dianhydride (PMDA). The hyperbranched polyimide (6FHBPI) using 4,4'-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) as dianhydride monomer was also added into the discussion. All the hyperbranched polyimides exhibited excellent organo-solubility and high thermal stability. Memory devices with a sandwiched structure of indium tin oxide (ITO)/HBPI/Al were constructed by using these HBPIs as the active layers. All these HBPIs based memory devices exhibited favorable memory performances, with switching voltages between -1.3 V and -2.5 V, ON/OFF current ratios up to 10(7) and retention times long to 10(4)s. Tunable memory characteristics from electrical insulator to volatile memory, and then to nonvolatile memory were obtained by adjusting the electron acceptors of these HBPIs. Molecular simulation results suggested that the electron affinity and the dipole moment of these HBPIs were responsible for the conversion of the memory characteristics. With the electron affinity and dipole moment of these HBPIs increasing, the memory characteristics turned from volatile to nonvolatile. The present study suggested that tunable memory performance could be achieved through adjusting the acceptor moieties of the hyperbranched polyimides. (C) 2017 Wiley Periodicals, Inc.

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