Abstract:Silicon carbide (SiC) has been widely used in nuclear technology due to its excellent properties. In the irradiation environment, the energetic incident particles can cause the atoms in the material to deviate from the position of the crystal lattice, thereby producing the vacancies, interstitial atoms, anti-site atoms and other point defects. These defects will change the thermal properties of the material and degrade the service performance of the material. Therefore, in this work the equilibrium molecular dynamics method (Green-Kubo method) is used to study the effect of point defects on the heat transfer properties of cubic Si-C (beta-SiC or 3CSiC) with the help of the Tersoff-type potential. The point defects considered include Si interstitial atoms (Si-I), Si vacancies (Si-V), Si anti-site atoms (Si-C), C interstitial atoms (C-I), C vacancies (C-V) and C anti-site atoms (C-Si). It is found that the thermal conductivity (lambda) decreases with the increase of the point defect concentration (c). The excessive thermal resistance (Delta R = R-defect - R-perfect, R = 1/lambda, R-defect is the thermal resistance of the defective material, and R-perfect is the thermal resistivity of the material without defects) has a linear relation with the concentration of point defects in the considered range (0.2% -1.6%), and its slope is the thermal resistivity coefficient. It can be found that the thermal resistivity coefficient of vacancy and interstitial atoms are higher than that of anti-site atoms; the thermal resistivity coefficient of point defects at high temperature is higher than at low temperature; the thermal resistivity coefficient of Si vacancies and Si interstitial atoms are higher than that of C vacancies and C interstitial atoms. These results are helpful in predicting the thermal conductivity of silicon carbide under irradiation and controlling the thermal conductivity of silicon carbide.

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Tunable Thermal Conductivity of Two-Dimensional SiC Nanosheets by Grain Boundaries: Implications for the Thermo-Mechanical Sensor

Tuning Thermal Resistance of SiC Crystal/amorphous Layered Nanostructures Via Changing Layer Thickness

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Molecular dynamics study of effects of point defects on thermal conductivity in cubic silicon carbide

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Nanoscale limit of the thermal conductivity in crystalline silicon carbide membranes, nanowires, and phononic crystals

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

Tuning the Thermal Conductivity of Silicon Phononic Crystals Via Defect Motifs: Implications for Thermoelectric Devices and Photovoltaics

Thermal Boundary Conductance Enhancement of the Si/Diamond Interface via Atomic Transition Strategy

Tuning The Thermal Conductivity Of Silicene With Tensile Strain And Isotopic Doping: A Molecular Dynamics Study

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Quasi-Ballistic Thermal Conduction in 6H-SiC

Thermal Conductivity Study of 2D Si4C8 material by Anharmonic Phonon Renormalization

Enhancing and Mapping Thermal Boundary Conductance across Bonded Si/SiC Interface

Structural and Phonon Transport Analysis of Surface-Activated Bonded SiC-SiC Homogenous Interfaces

Intrinsic Nanotwin Effect on Thermal Boundary Conductance in Bulk and Single-Nanowire Twinning Superlattices

Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces

Thermal transport mechanism of AlN/SiG/3C-SiC typical heterostructures

Quasi-ballistic thermal transport in silicon carbide nanowires