Abstract:Abstract The concept of valley originates from two degenerate but nonequivalent energy bands at the local minimum in the conduction band or local maximum in the valence band. Manipulating the valley states for information storage and processing develops a brand-new electronics—valleytronics. Broken inversion symmetry is a necessary condition to produce pure valley currents. The polycrystalline two-dimensional materials (graphene, silicene, monolayer group-VI transition metal dichalcogenides, etc) with pristine grains stitched together by disordered grain boundaries (GBs) are the natural inversion-symmetry-broken systems and the candidates in the field of valleytronics. Different from their pristine forms, the Dirac valleys on both sides of GBs are mismatched in the momentum space and induce peculiar valley transport properties across the GBs. In this review, we systematically demonstrate the fundamental properties of valley degree of freedom across mostly studied and experimentally feasible polycrystalline structure—the line defect, and the manipulation strategies with electrical, magnetic and mechanical methods to realize the valley polarization. We also introduce an effective numerical method, the non-equilibrium Green’s function technique, to tackle the valley transport issues in the line defect systems. The present challenges and the perspective on the further investigations of the line defect in valleytronics are also summarized.

Valley Precession in Graphene Superlattices

Strain-Modulated Perfect Valley Precession and Valley Transistor in Graphene

Manipulation of valley isospins in strained graphene for valleytronics

Single-Valley Engineering in Graphene Superlattices

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

Spatial valley separation in strained graphene pn junction.

Valley Transport in Kekulé Structures of Graphene

Valley-Selective Polarization in Twisted Bilayer Graphene Controlled by a Counter-Rotating Bicircular Laser Field

Valley-Selective Klein Tunneling through a Superlattice Barrier in Graphene

Valleytronics in two-dimensional materials with line defect

A valley valve and electron beam splitter

Valleytronics in 2D materials

Gate-field control of valley polarization in valleytronics

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Valley Supercurrent in the Kekulé Graphene Superlattice Heterojunction

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Easy-to-configure zero-dimensional valley-chiral modes in a graphene point junction

Switchable Valley Injection into Graphene

Quantum Manipulation of Valleys in Bilayer Graphene: Theory and Applications

Realization of Valley Polarization in Monolayer WS2 Via 3d Transition Metal Atom Adsorption