Infrared and Terahertz Modulation Characteristics of n-GeBi/p-Si Photodiodes

Dainan Zhang,Lichuan Jin,Yulong Liao,Yang Liu,Tianlong Wen

DOI: https://doi.org/10.1109/TED.2016.2626467

IF: 3.1

2017-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, germanium-bismuth (Ge1-xBix, x = 0-0.32) is grown by low-temperature molecular beam epitaxy. Because Bi is an element belonging to group V, GeBi films show inherent n-type doping properties compared with GeSn ones. Inherent n-type Ge1-xBix films with a doping concentration of 2 × 1015-2 × 1016/cm3 are epitaxially deposited on p-type Si substrates to form p-n junctions. Current-volta...