Effects of Si-doping on Field Emission Characteristics of AlN Films Grown on N-Type 6H-Sic by MOCVD

F. Liang,P. Chen,D. G. Zhao,D. S. Jiang,Z. S. Liu,J. J. Zhu,J. Yang,W. Liu,X. Li,S. T. Liu,H. Yang,L. Q. Zhang,J. P. Liu,Y. T. Zhang,G. T. Du

DOI: https://doi.org/10.1080/10667857.2016.1241037

2016-01-01

Materials Technology

Abstract:The field-emission (FE) characteristics of 200 nm-thick Si-doped AlN films with different concentration of Si-dopant is investigated. It is found that the AlN film with lower concentration of Si-dopant has a smaller turn-on voltage, larger maximum current density and more stable FE current. Accompanying with atomic force surface micro-images, it is suggested that the stable current is attributed to a uniform surface, which is related a uniform local field enhancement factors and thus a stable FE current without discontinuous fluctuations. Furthermore, the analysis of scanning electron microscopy indicates that a smaller turn-on voltage and larger maximum current density may result from the electron transport channel of V-defects.