Abstract:High‐quality c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) semiconductor can be achieved by annealing of a‐IGTO in O2 furnace at 700 °C. The O vacancy‐rich CAAC‐IGTO semiconductor has ferroelectric‐like properties. As a result, synaptic CAAC‐IGTO TFT can mimic the electrical characteristics of biological synapses using a conventional SiO2 gate insulator. Therefore, the CAAC‐IGTO TFTs can be applied to highly integrated neuromorphic electronics. Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this work, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous works use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

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