Abstract: There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a large number of samples where structure properties or the carrier density is systematically varied. FeSe, with its structural simplicity, is an ideal platform for addressing this question. It has been demonstrated that the superconductivity in this material can be controlled through crystal lattice tuning, as well as electronic structure manipulation. Here, we apply a high-throughput methodology to FeSe to systematically delineate the interdependence of its structural and electronic properties. Using a dual-beam pulsed laser deposition, we have generated FeSe films with a marked gradient in the superconducting transition temperature (below 2 K < Tc < 12 K) across 1 cm width of the films. The Tc gradient films display ~ 1% continuous stretch and compression in the out-of-plane and in-plane lattice constants respectively, triggering the continuous enhancement of superconductivity. Combining transport and angular-resolved photoemission measurements on uniform FeSe films with tunable Tc from 3 K to 14 K, we find that the electron carrier density is intimately correlated with Tc, i.e., it increases by a factor of 6 and ultimately surpasses the almost constant hole concentration. Our transmission electron microscope and band structure calculations reveal that rather than by shifting the chemical potential, the enhanced superconductivity is linked to the selective adjustment of the dxy band dispersion across the Fermi level by means of reduced local lattice distortions. Therefore, such novel mechanism provides a key to understand discrete superconducting phases in FeSe.

Tuning Phase Transitions in FeSe Thin Flakes by Field-Effect Transistor with Solid Ion Conductor As the Gate Dielectric

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

Tuning Electronic Properties of Fese0.5te0.5 Thin Flakes Using A Solid Ion Conductor Field-Effect Transistor

Tuning electronic properties of FeSe$_{0.5}$Te$_{0.5}$ thin flakes by a novel field effect transistor

Discrete Superconducting Phases in Proton-Intercalated FeSe Thin Flakes

Electric-field-controlled Superconductor-Ferromagnetic Insulator Transition

Phase Diagram and Evolution of the Magnetic Ordering State Driven by a Field-Effect Transistor in (li,fe)ohfes Thin Flakes

Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy

Protonation-induced discrete superconducting phases in bulk FeSe single crystals

Study of Composition-Modulated Interband Transitions Characteristic and Charge Dynamics Response of High-Throughput Fese1-Xtex Combinatorial Film

Gate-Tuned Superconductor-Insulator Transition In (Li,Fe)Ohfese

Evolution of High-Temperature Superconductivity from a Low-T_{c} Phase Tuned by Carrier Concentration in FeSe Thin Flakes.

Nematic Transition and Nanoscale Suppression of Superconductivity in Fe(Te,Se)

High-throughput investigation of tunable superconductivity in FeSe films

Gate-tunable Phase Transitions in Thin Flakes of 1T-Tas2.

Discrete Superconducting Phases in FeSe-Derived Superconductors

Phase Diagram and Electronic Indication of High-Temperature Superconductivity at 65 K in Single-Layer FeSe Films.

Metal-insulator Crossover and Massive Dirac Fermions in Electron-Doped FeTe

Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films

Gate-tunable Phase Transitions in 1T-Tas_2

Impurity Scattering Effects on the Superconducting Properties and the Tetragonal-to-orthorhombic Phase Transition in FeSe