Abstract:Monoclinic BiVO4 (m-BiVO4) is a novel semiconductor photocatalyst used for degradation of organic pollutants. Based on first principles study, the effects of Nb, N and Nb/N atoms on physical properties of 2 x 2 x 2 BiVO4 are investigated by considering their elastic properties, Debye temperature, electronic band structures, band edges and optical properties. Geometrical optimizations show that the lattice constants and angles of Nb-BiVO4, N-BiVO4, Nb/N-BiVO4 change slightly with respect to ideal BiVO4. Elastic properties indicate that Nb-BiVO4 is the stiffest and easily formed, Nb/N-BiVO4 is the most ductile, N-BiVO4 is the hardest. The values of Poisson's ratio nu show the ionic bonding is dominated in ideal and defective BiVO4. Debye temperature theta(D) of N-BiVO4 is the largest among all the materials considered. Ideal BiVO4 has direct band gaps of 2.095 eV while Nb-BiVO4, N-BiVO4 and Nb/N-BiVO4 have indirect band gaps of 2.014 eV, 1.871 eV and 1.823 eV, respectively. Band edge positions show that the reduction and oxidation capabilities are in the order of ideal BiVO4 > Nb-BiVO4 > N-BiVO4 > Nb/N-BiVO4, respectively. The static dielectric constants epsilon(1)(0) are 8.290, 8.382, 12.272 and 10.774 for ideal, Nb-BiVO4, N-BiVO4 and Nb/N-BiVO4, respectively. Compared with ideal BiVO4, red shifts occur in Nb-BiVO4, N-BiVO4 and Nb/N-BiVO4 which improve the visible-light absorption effectively. By Tauc's relation, optical band gaps E-g(opt) are estimated as 2.222 eV, 0.938 eV, 0.694 eV and 0.802 eV for ideal, Nb-BiVO4, N-BiVO4 and Nb/N-BiVO4, respectively. In addition, it is found that E-g(opt) > E-g for ideal BiVO4, while E-g(opt) < E-g for Nb-BiVO4, N-BiVO4 and Nb/N-BiVO4.

First-Principle Investigations of Structural, Electronic, Magnetic and Optical Properties of Bulk Bivo3

BiVO3 : A Bi-based Material with Promising Uv-Visible Light Absorption Properties

Density functional theory study of the structural, electronic, and surface reaction properties of bismuth vanady1 oxyhalide BiVO3F

Influences of Vacancies on the Structural, Electronic and Optical Properties of Monoclinic BiVO4

First-principles calculation of structural, electronic, optical, and mechanical properties of SrVO3

Electronic Structure and Optical Properties of Monoclinic Clinobisvanite Bivo4

First-principles Comparative Study of Multiferroic Compound PbVO3

Effects of Oxygen Vacancy on the Mechanical, Electronic and Optical Properties of Monoclinic BiVO4

First-Principle Insight Into the Effects of Oxygen Vacancies on the Electronic, Photocatalytic, and Optical Properties of Monoclinic BiVO4(001)

First-principles investigation on the interfacial interaction and electronic structure of BiVO4/WO3 heterostructure semiconductor material

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of Bi4O5Br2: First-Principles Calculations

Structural and Photocatalytic Properties of Novel Bi2GaVO7

Role of the ferroelastic strain in the optical absorption of BiVO4

Dielectric behavior, band gap, in situ X-ray diffraction, Raman and infrared study on (1 - X)BiVO4-x(Li0.5Bi 0.5)MoO4 solid solution

Structural stability, band structure and optical properties of different BiVO 4 phases under pressure

Intermediate Bands and P-Orbital Tuning of the Band Structure of BiFeO3 for Photovoltaic Application.

The influences of Nb and N dopants on elastic, electronic and optical properties of monoclinic BiVO4

First-principles calculations on electronic, optical and photocatalytic properties of BiNbO4

Intermediate bands and p orbital tuning the band structure of BiFeO3 for photovoltaic application

First principle calculations of electronic, band structural, and optical properties of BixSr1-xTiO3 perovskite

Structural Stability, Electronic, and Optical Properties of BiVO4 With Oxygen Vacancy Under Pressure