Investigating Change of Properties in Gallium Ion Irradiation Patterned Single-Layer Graphene

Quan Wang,Jinyao Dong,Bing Bai,Guoxin Xie
DOI: https://doi.org/10.1016/j.physleta.2016.08.025
IF: 2.707
2016-01-01
Physics Letters A
Abstract:Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate.
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