Electrophobic interaction induced impurity clustering in metals

Hong Bo Zhou,Jin Long Wang,Wei Jiang,Guang Hong Lu,Jeffery A. Aguiar,Feng Liu
DOI: https://doi.org/10.1016/j.actamat.2016.08.005
IF: 9.4
2017-01-01
Acta Materialia
Abstract:We introduce the concept of electrophobic interaction, analogous to hydrophobic interaction, for describing the behavior of impurity atoms in a metal, a “solvent of electrons”. We demonstrate that there exists a form of electrophobic interaction between impurities with closed electron shell structure, which governs their dissolution behavior in a metal. Using He, Be and Ar as examples, we predict by first-principles calculations that the electrophobic interaction drives He, Be or Ar to form a close-packed cluster with a clustering energy that follows a universal power-law scaling with the number of atoms (N) dissolved in a free electron gas, as well as W or Al lattice, as Ec ∝ (N2/3−N). This new concept unifies the explanation for a series of experimental observations of close-packed inert-gas bubble formation in metals, and significantly advances our fundamental understanding and capacity to predict the solute behavior of impurities in metals, a useful contribution to be considered in future material design of metals for nuclear, metallurgical, and energy applications.
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